| PART |
Description |
Maker |
| K7N403601B K7N403601B-QC13 K7N403609B-QC20 K7N4018 |
128Kx36 & 256Kx18 Pipelined NtRAMTM
256 Megabit, 3.0 Volt-only Page Mode Flash Memory
128Kx36 & 256Kx18 Pipelined NtRAM 128K × 36
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7N403601M K7N401801M |
128Kx36 & 256Kx18 Pipelined NtRAM-TM
|
SAMSUNG[Samsung semiconductor]
|
| K7P401822B-HC16 K7P401822B-HC20 K7P401822B-HC25 K7 |
SENSOR DIFF VACUUM GAGE 10 H2O 128K × 36
128Kx36 & 256Kx18 Synchronous Pipelined SRAM 128K × 36
256K X 18 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119
128K X 36 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119
256K X 18 STANDARD SRAM, 3 ns, PBGA119 14 X 22 MM, BGA-119
SENSOR DIFF VACUUM GAGE 1PSI
SENSOR ABSOLUTE 0-15PSIA
128Kx36 & 256Kx18 Synchronous Pipelined SRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| K7A403200B K7A403200B-QC K7A403201B K7A403201B-QC |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
128Kx36/x32 & 256Kx18 Synchronous SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K7P401823B |
128Kx36 & 256Kx18 SRAM
|
Samsung semiconductor
|
| KM718V847 |
(KM736V747 / KM718V847) 128Kx36 & 256Kx18 Flow-Through NtRAM
|
Samsung Semiconductor
|
| IDT71V2558SA133BG IDT71V2558SA133BGI IDT71V2558SA1 |
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 3.2 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 5 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PBGA165
SPLICE,TERM,BUTT,INSUL,UNION,16-22AWG
|
IDT
Integrated Device Technology, Inc.
|
| CY7C1382CV25-167AI CY7C1382CV25-200BZI CY7C1382CV2 |
512K x 36 pipelined SRAM, 167MHz
512K x 36/1M x 18 Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA165
TRANS DARL PNP 100V 8A TO-220FP 1M X 18 CACHE SRAM, 3.4 ns, PQFP100
512K x 36 pipelined SRAM, 225MHz
|
Cypress Semiconductor, Corp.
|
| IDT71P72804 IDT71P72604 IDT71P72604S167BQ IDT71P72 |
1.8V 1M x 18 QDR II PipeLined SRAM
1.8V 512K x 36 QDR II PipeLined SRAM
Storage, Cases
Tools, Applicator RoHS Compliant: NA
Nickel Cadmium Battery Pack; Voltage Rating:12V RoHS Compliant: NA
SIGN, FIRE EXTINGUISHER, 100X200MM; RoHS Compliant: NA
18Mb Pipelined QDRII SRAM Burst of 2 35.7流水线推QDRII SRAM的爆
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.45 ns, PBGA165
|
IDT
http://
Integrated Device Technology, Inc.
|
| KM736V799 |
128Kx36 Synchronous SRAM
|
Samsung Semiconductor
|
| GS8322Z18B-166I GS8322Z18B-225 GS8322Z18B-225I GS8 |
166MHz 8.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM
225MHz 6.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM
133MHz 11ns 2M x 18 36Mb NBT pipelined/flow through SRAM
150MHz 10ns 2M x 18 36Mb NBT pipelined/flow through SRAM
200MHz 7.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM
|
GSI Technology
|
|
