| PART |
Description |
Maker |
| AM90CL255-08JC AM90CL255-15JC AM90CL255-12PC |
256K X 1 NIBBLE MODE DRAM, 80 ns, PQCC18
256K X 1 NIBBLE MODE DRAM, 150 ns, PQCC18
256K X 1 NIBBLE MODE DRAM, 120 ns, PDIP16
|
ADVANCED MICRO DEVICES INC
|
| HM511001AZP-10 HM511001AZP-7 HM511001AZP-12 HM5110 |
x1 Nibble Mode DRAM x1半字节模式DRAM
|
DB Lectro, Inc.
ITT, Corp.
Omron Electronics, LLC
|
| KM41256AJ-12 KM41257AJ-12 KM41256AJ-10 KM41257AJ-1 |
256K X 1 Bit Dynamic RAM with Page / Nibble Mode 256K × 1位动态随机存储器与页/半字节模
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| AM9016EZL AM9016DDL AM9016CZL |
16K X 1 PAGE MODE DRAM, 200 ns, CQCC18
16K X 1 PAGE MODE DRAM, 250 ns, CDIP16
16K X 1 PAGE MODE DRAM, 300 ns, CQCC18
|
ADVANCED MICRO DEVICES INC
|
| AS4C256K16F0-25JC AS4C256K16F0-25JI AS4C256K16F0-2 |
5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access time
x16FastPageModeDRAM
5V 256K X 16 CMOS DRAM (Fast Page Mode)
5V 256K x 16 CM0S DRAM (fast page mode), 35ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 50ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time
|
Alliance Semiconductor Corporation
|
| GM71V17403C GM71V17403C-5 GM71V17403C-6 GM71V17403 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M
x4 EDO Page Mode DRAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| HYM532100M-80 HYM532100M-70 HYM532100MG-80 HYM5321 |
x32 EDO Page Mode DRAM Module
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
Avago Technologies, Ltd.
|
| MSC2323258A MSC2323258A-XXBS4 MSC2323258A-XXDS4 |
2097152-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO
2,097,152-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO
DPDT 10A MINI 24VDC 2097152字32位DRAM模块：快速页面模式型与江
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
| IS41C82002-50TI IS41LV82002-50T IS41C82002-60T IS4 |
x8 EDO Page Mode DRAM x8 EDO公司页面模式的DRAM
2M X 8 EDO DRAM, 60 ns, PDSO28
2M X 8 EDO DRAM, 50 ns, PDSO28
|
Atmel, Corp.
INTEGRATED SILICON SOLUTION INC
|
| MB8504E032AA-60 MB8504E032AA-70 |
4 M×32 BITS Hyper Page Mode DRAM Module(CMOS 4 M×32 位超级页面存取模式动态RAM模块) 4米32位超页模式内存的CMOS米32位超级页面存取模式动态内存模块）
4 M?32 BITS Hyper Page Mode DRAM Module(CMOS 4 M?32 浣??绾ч〉?㈠???ā寮????AM妯″?)
|
Fujitsu, Ltd.
Fujitsu Limited
|
| MT4C4001JECG-10_883C MT4C4001JECG-10_IT MT4C4001JE |
1 MEG x 4 DRAM Fast Page Mode DRAM
|
http://
Austin Semiconductor
|
