| PART |
Description |
Maker |
| AMMC-5023 |
AMMC-5023 · 23 GHz Low Noise Amplifier
23 GHz Low Noise Amplifier (21.2-26.5 GHz)
|
Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
|
| BFQ19S |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz
NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| AT-41535 AT-41535G |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
AVAGO TECHNOLOGIES LIMITED
|
| PHT41470B |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Teledyne Technologies I...
|
| AT-41435 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent(Hewlett-Packard...
|
| AT-41410 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent(Hewlett-Packard...
|
| AT-41400 AT-41400-GP4 AT-41400-G |
Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| AT-41400 AT-41400-GP4 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip
|
Agilent(Hewlett-Packard...
|
| MAAM12021 MAAM12021RTR MAAM12021SMB MAAM12021TR |
1.5-1.6 GHz, low noise amplifier
Low Noise Amplifier 1.5 - 1.6 GHz
GT 35C 7#12,28#16 SKT RECP
|
MA-Com
MACOM[Tyco Electronics]
|
| UPC1676G-T1 |
1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER 1.2千兆赫带宽，低噪声硅MMIC放大
|
NEC, Corp.
|
| CFY77 CFY77-08 CFY77-10 Q62702-F1559 Q62702-F1549 |
From old datasheet system
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| Q62702-F1772 BF2000W |
From old datasheet system
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz)
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
