| PART |
Description |
Maker |
| KM29W32000T |
4M x 8 Bit NAND Flash Memory(4M x 8 浣?NAND???瀛???ī
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位，8米16位NAND闪存
16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HY27USXXX HY27SS16121M HY27SSXXX HY27US08121M HY27 |
(HY27SSxxx) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 512兆（64Mx8bit / 32Mx16bit）NAND闪存
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| K9F2808U0B-DCB0 K9F2808Q0B-DIB0 K9F2808U0B-YIB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit NAND Flash Memory 1,600 × 8位NAND闪存
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| TC58DVM82A1FT TC58DVM82F1FT |
Flash - NAND
|
TOSHIBA
|
| TC58DVM82A1XBJ1 |
Flash - NAND
|
TOSHIBA
|
| MT29F1G08 |
NAND Flash
|
Micron Technology
|
| AT49F8192 AT49F8192- AT49F8192T-90TI AT49F8192-12R |
8-Megabit 512K x 16 5-volt Only CMOS Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48
8-Megabit 512K x 16 5-volt Only CMOS Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO44
Quadruple 2-Input Positive-NAND Gate 14-TSSOP -40 to 125
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| H27UBG8T2A |
32Gb NAND Flash
|
Hynix
|
| HY27SS08561M HY27US08561M |
NAND Flash - 256Mb
|
Hynix Semiconductor
|
| MT29F128G08AMAAA MT29F128G08AJAAA MT29F256G08AUAAA |
NAND Flash Memory
|
Micron
|
