| PART |
Description |
Maker |
| W971GG8JB |
16M × 8 BANKS × 8 BIT DDR2 SDRAM
|
Winbond
|
| W972GG6JB |
16M X 8 BANKS X 16 BIT DDR2 SDRAM
|
Winbond
|
| W9751G8KB |
16M x 4 BANKS ?8 BIT DDR2 SDRAM
|
Winbond
|
| W9712G6JB |
2M × 4 BANKS × 16 BIT DDR2 SDRAM
|
Winbond
|
| W632GG6KB-15 W632GG6KB-11 |
16M X 8 BANKS X 16 BIT DDR3 SDRAM
16M X 8 BANKS X 16 BIT DDR3 SDRAM
|
Winbond
|
| HY57V28820AT HY57V28820AT-H |
16Mx8|3.3V|4K|6/K/H/8/P/S|SDR SDRAM - 128M
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
HYNIX SEMICONDUCTOR INC
|
| K4S56163PF K4S56163PF-F1L K4S56163PF-F90 K4S56163P |
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 LEAD FREE, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM
CAP 47UF 350V ELECT EB SMD
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M12L2561616A-7TG |
4M x 16 Bit x 4 Banks Synchronous DRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Elite Semiconductor Memory Technology, Inc.
|
| HYS72V16220GU HYS64V16220GU HYS64V8300GU HYS72V830 |
3.3 V 16M × 64-Bit × 2 Bank同步动态DRAM Module(3.3 V 16M × 64-× 2列同步动态RAM模块)
3.3 V 16M × 72-Bit × 2 Bank同步动态DRAM Module(3.3 V 16M × 72-× 2列同步动态RAM模块)
3.3 V 8M × 64-Bit × 1 Bank同步动态DRAM Module(3.3 V 8M × 64-× 1列同步动态RAM模块) 3.3800万64位1行同步动态内存（3.38米64 -位1列同步动态内存模块）
|
SIEMENS AG
|
| MT48LC4M32B2B51 MT48LC4M32B2P MT48LC4M32B2F51 MT48 |
SDR SDRAM MT48LC4M32B2 ?1 Meg x 32 x 4 Banks
|
Micron Technology
|
