PART |
Description |
Maker |
W9712G8JB |
4M × 4 BANKS × 8 BIT DDR2 SDRAM
|
Winbond
|
W9751G6JB W9751G6JB-25 |
8M ?4 BANKS ?16 BIT DDR2 SDRAM 8M x 4 BANKS x 16 BIT DDR2 SDRAM
|
http:// Winbond
|
W9712G6JB |
2M × 4 BANKS × 16 BIT DDR2 SDRAM
|
Winbond
|
W9725G8JB |
8M ?4 BANKS ?8 BIT DDR2 SDRAM
|
Winbond
|
W632GG6KB-15 W632GG6KB-11 |
16M X 8 BANKS X 16 BIT DDR3 SDRAM 16M X 8 BANKS X 16 BIT DDR3 SDRAM
|
Winbond
|
K4S510732C |
16M x 8Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Electronic
|
EDE2508ABSE-5C-E EDE2516ABSE-5C-E EDE2516ABSE-6E-E |
256M bits DDR2 SDRAM 16M X 16 DDR DRAM, 0.45 ns, PBGA84
|
Elpida Memory, Inc. ELPIDA MEMORY INC
|
K4S51323PF-MF90 K4S51323PF-MF75 K4S51323PF-MF1L K4 |
16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 LEAD FREE, FBGA-90 16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 FBGA-90 16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 LEAD FREE, FBGA-90 16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 FBGA-90 4M x 32Bit x 4 Banks Mobile-SDRAM From old datasheet system
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HYM72V1600GS-50 HYM72V1610GS-50 HYM72V1600GS-50- H |
16M x 72-Bit Dynamic RAM Module 16米x 72位动态随机存储器模块 16M x 72-Bit Dynamic RAM Module 16M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168
|
SIEMENS AG Siemens Semiconductor Group
|
MBM29LV160T-80 MBM29LV160T-80PBT MBM29LV160T-80PBT |
FLASH MEMORY 16M (2M x 8/1M x 16) BIT CMOS 16M (2M x 8/1M x 16) bit
|
Fujitsu Microelectronics
|