| PART |
Description |
Maker |
| RM30TA-H RM30TPM-M RM30TA-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
| RM30TC-24 RM30TC-2H |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| QM100HA-H QM100HY-H |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PM15CNJ060 E80271 E80276 |
MITSUBISHI <INTELLIGENT POWER MODULES> FLAT-BASE TYPE INSULATED PACKAGE 三菱\u003cINTELLIGENT POWER MODULES\u003e平性基地型绝缘包装
INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
MITSUBISHI FLAT-BASE TYPE INSULATED PACKAGE
IPMS Modules: 600V
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| CM100DU-24NFH |
MITSUBISHI IGBT MODULES
|
Mitsubishi Electric Corporation
|
| MDD26-18N1B MDD26 MDD26-08N1B MDD26-12N1B MDD26-14 |
Diode Modules
Thyristor and Rectifiers Modules
Diode Modules 36 A, 1400 V, SILICON, RECTIFIER DIODE, TO-240AA
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| MDD172-16N1 MDD172 MDD172-08N1 MDD172-12N1 MDD172- |
High Power Diode Modules 大功率二极管模块
High Power Diode Modules 190 A, 1600 V, SILICON, RECTIFIER DIODE
High Power Diode Modules 190 A, 800 V, SILICON, RECTIFIER DIODE
High Power Diode Modules 190 A, 1800 V, SILICON, RECTIFIER DIODE
Thyristor and Rectifiers Modules
|
IXYS, Corp.
IXYS Corporation
|
| QM800HA-24B |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| QM80DY-3H |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| QM400HA-24 |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
