PART |
Description |
Maker |
AN0110NA |
100 V, 100 om, N-channel enhancement-mode D-MOS FET 8-channel array
|
Topaz Semiconductor
|
FSF2510 FSF2210 FSN1410 FSN1606 IRF540 |
N Channel MOSFET; Package: TO-254; trr (nsec): 600; t(on) (nsec): 100; ID (A): 25; RDS(on) (Ohms): 0.07; PD (W): 125; BVDSS (V): 100; Rq: 1; VSD (V): 2.3 SMALL SIGNAL, FET N Channel MOSFET; Package: TO-254; trr (nsec): 300; t(on) (nsec): 23; ID (A): 22; RDS(on) (Ohms): 0.1; PD (W): 100; BVDSS (V): 100; Rq: 1.3; VSD (V): 2.5 22 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET N Channel MOSFET; Package: TO-257; trr (nsec): 250; t(on) (nsec): 14; ID (A): 14; RDS(on) (Ohms): 0.18; PD (W): 50; BVDSS (V): 100; Rq: 2; VSD (V): 2.5 14 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET N Channel MOSFET; Package: TO-257; trr (nsec): 220; t(on) (nsec): 21; ID (A): 16; RDS(on) (Ohms): 0.07; PD (W): 50; BVDSS (V): 60; Rq: 2; VSD (V): 1.8 16 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET 28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp. STMicroelectronics N.V. MICROSEMI CORP
|
PSMN9R5-100PS |
N-channel 100 V 9.6 m standard level MOSFET in T0220 89 A, 100 V, 0.0096 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
|
PSMN034-100PS |
N-channel 100 V 34.5 m惟 standard level MOSFET in TO220. N-channel 100 V 34.5 mΩ standard level MOSFET in TO220. N-channel 100 V 34.5 m standard level MOSFET in TO220. 32 A, 100 V, 0.0345 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
|
PPF75N10N |
N Channel MOSFET; Package: TO-258; ID (A): 50; RDS(on) (Ohms): 0.025; PD (W): 300; BVDSS (V): 100; Rq: 0.42; 50 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
|
Microsemi, Corp.
|
IPB05CN10NG |
100 A, 100 V, 0.0051 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
INFINEON TECHNOLOGIES AG
|
AP18P10GH AP18P10GJ |
12 A, 100 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 12 A, 100 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
ADVANCED POWER ELECTRONICS CORP Advanced Power Electronics Corp.
|
IRFN9140SMD IRFN9140SMDR4 |
P-CHANNEL POWER MOSFET 14 A, 100 V, 0.22 ohm, P-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, SMD1, 3 PIN ER 06 20 P/C 14 A, 100 V, 0.22 ohm, P-CHANNEL, Si, POWER, MOSFET
|
International Rectifier SEME-LAB[Seme LAB] TT electronics Semelab, Ltd. SEMELAB LTD
|
BSS123LT3G BSS123LT1 BSS123LT1D BSS123LT1G BSS123L |
Power MOSFET 170 mAmps, 100 Volts N-Channel SO-23(170 mA, 100 V,N通道SOT3封装的功率MOSFET) TMOS FET Transistor
|
ONSEMI[ON Semiconductor]
|
MMFT1N10E_D ON2216 MMFT1N10E MMFT1N10 |
MEDIUM POWER TMOS FET 1 AMP 100 VOLTS 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA N-hannel Enhancement-ode Logic Level SOT23 From old datasheet system
|
Motorola Mobility Holdings, Inc. ON Semi MOTOROLA[Motorola, Inc]
|
HAT2058R09 HAT2058R-EL-E |
4 A, 100 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 4.90 X 3.95 MM, PLASTIC, SOP-8 Silicon N Channel Power MOS FET High Speed Power Switching
|
Analog Devices, Inc. Renesas Electronics Corporation
|
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