| PART |
Description |
Maker |
| NMA5110-B1M |
High Power Broadband Noise Sources 300 MHz to 1000 MHz
|
Micronetics, Inc.
|
| NMA2516-2T |
High Power Broadband Noise Sources 7800 MHz to 8500 MHz
|
Micronetics, Inc.
|
| NMA5110-A1M |
High Power Broadband Noise Sources 300 MHz to 1000 MHz
|
Micronetics, Inc.
|
| NMA2511-2T |
High Power Broadband Noise Sources 10 MHz to 1500 MHz
|
Micronetics, Inc.
|
| NMA2512-1T |
High Power Broadband Noise Sources 10 MHz to 2000 MHz
|
Micronetics, Inc.
|
| Q62702-F1382 BFP183 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) NPN硅射频晶体管（对于低噪声，高增益2毫安0毫安的集电极电流宽带放大器）
NPN Silicon RF Transistor (For low noise high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon Technologies AG
|
| Q62702-F1492 BFR182W |
NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA)
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BFG193 Q62702-F1291 |
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
|
SIEMENS[Siemens Semiconductor Group]
http://
|
| BFP182R |
NPN Silicon RF Transistor
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
|
Infineon Technologies AG
|
| BFP182 |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| NMA5300-B1M |
High Power Broadband Noise Sources 2000 MHz to 18000 MHz
|
Micronetics, Inc.
|
