| PART |
Description |
Maker |
| ITZ08F12P ITZ08F12B |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-247
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-220AB 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 16A条一（c）| TO - 220AB现有
|
Microsemi, Corp.
|
| P8SG-053R6ZH52M P8SG-0505ZH52M P8SG-247R2ZH52M |
Input voltage:5V, output voltage /-3.6V ( /-200mA), 5.2KV isolated 1.5W regulated single output
Input voltage:5V, output voltage /-5V ( /-150mA), 5.2KV isolated 1.5W regulated single output
Input voltage:24V, output voltage /-7.2V ( /-100mA), 5.2KV isolated 1.5W regulated single output
|
PEAK electronics
|
| FZ800R33KF1 FS150R12KF4 FD400R12KF4 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 150A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展|四楼一（c
|
Infineon Technologies AG
|
| DF100R12KF-A FD150R12KF-K |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 100A I(C) | M:HL093HW048 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 100A一（c）|米：HL093HW048
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 150A I(C) | M:HL093HW048 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 150A一（c）|米：HL093HW048
|
Atmel, Corp.
Air Cost Control
|
| SGW15N120 |
TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,32A I(C),TO-247AC
|
Infineon
|
| 2T2KF |
2KV Diode, Axial Leaded Fast Recovery Rectifier Diodes
|
Semtech Corporation
|
| IRKU91-12S90 IRKU71-12 IRKU71-12S90 IRKU71-16 IRKU |
THYRISTOR MODULE|SCR|DUAL|CC|1.2KV V(RRM)|90A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|1.2KV V(RRM)|70A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|1.6KV V(RRM)|70A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|400V V(RRM)|70A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|800V V(RRM)|70A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|1.6KV V(RRM)|90A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|800V V(RRM)|90A I(T)
THYRISTOR MODULE|SCR|DUAL|CA|1.2KV V(RRM)|90A I(T) 晶闸管模块|可控硅|双|加利福尼亚州| 1.2KV五（无线资源管理）| 90A型我（翻译）
THYRISTOR MODULE|SCR|DUAL|CA|1.2KV V(RRM)|70A I(T) 晶闸管模块|可控硅|双|加利福尼亚州| 1.2KV五（无线资源管理）|0A我（翻译
THYRISTOR MODULE|SCR|DUAL|CC|400V V(RRM)|90A I(T) 晶闸管模块|可控硅|双|消委会| 400V五（无线资源管理）| 90A型我（翻译）
|
NXP Semiconductors N.V.
Bel Fuse, Inc.
Dynex Semiconductor, Ltd.
Glenair, Inc.
|
| 7MBR25NE120 |
TRANSISTOR,IGBT POWER MODULE,COMPLEX BRIDGE,1.2KV V(BR)CES,25A I(C)
From old datasheet system
|
Fuji Semiconductors, Inc.
|
| IRKT430-20 |
THYRISTOR MODULE|SCR DOUBLER|2KV V(RRM)|430A I(T) 晶闸管模块|可控硅倍增| 2kV的五（无线资源管理）| 430A我（翻译
|
International Rectifier, Corp.
|
| GP400LSS12S |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展|四楼一（c
|
ITT, Corp.
|
| FS8R12KF |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 1.2KV五（巴西）国际消费电子展| 8A条一（c
|
ECM Electronics, Ltd.
|
