| PART |
Description |
Maker |
| RM10TA-2H RM10TA-24 |
MITSUBISHI DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| RM30TC-40 |
MITSUBISHI DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| MDD172-16N1 MDD172 MDD172-08N1 MDD172-12N1 MDD172- |
High Power Diode Modules 大功率二极管模块
High Power Diode Modules 190 A, 1600 V, SILICON, RECTIFIER DIODE
High Power Diode Modules 190 A, 800 V, SILICON, RECTIFIER DIODE
High Power Diode Modules 190 A, 1800 V, SILICON, RECTIFIER DIODE
Thyristor and Rectifiers Modules
|
IXYS, Corp.
IXYS Corporation
|
| QM100HA-H QM100HY-H |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MDD142 MDD142-18N1 MDD142-08N1 MDD142-12N1 MDD142- |
Thyristor and Rectifiers Modules
HIgh Power Diode Modules 165 A, 800 V, SILICON, RECTIFIER DIODE
HIgh Power Diode Modules 165 A, 1800 V, SILICON, RECTIFIER DIODE
HIgh Power Diode Modules 165 A, 1400 V, SILICON, RECTIFIER DIODE
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| QM150DY-HBK |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| QM100DY-2HBK |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| QM100DY-24BK |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| QM150DY-HK |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| QM80DY-3H |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
