| PART |
Description |
Maker |
| LH28F008SCHB-LF12 LH28F008SCT-LF12 LH28F008SCR-LF8 |
1M X 8 FLASH 2.7V PROM, 120 ns, PBGA42 FBGA-42
1M X 8 FLASH 2.7V PROM, 120 ns, PDSO40 TSOP1-40
1M X 8 FLASH 2.7V PROM, 85 ns, PDSO40 REVERSE, TSOP1-40
1M X 8 FLASH 2.7V PROM, 120 ns, PDSO40 REVERSE, TSOP1-40
1M X 8 FLASH 2.7V PROM, 85 ns, PBGA42 FBGA-42
1M X 8 FLASH 2.7V PROM, 85 ns, PDSO44 SOP-44
1M X 8 FLASH 2.7V PROM, 85 ns, PDSO40 TSOP1-40
1M X 8 FLASH 2.7V PROM, 120 ns, PDSO44 SOP-44
1M X 8 FLASH 5V PROM, 120 ns, PDSO56
512K X 8 FLASH 5V PROM, 60 ns, PDSO44
2M X 8 FLASH 5V PROM, 120 ns, PDSO56
512K X 8 FLASH 5V PROM, 60 ns, PDSO48
256K X 8 FLASH 5V PROM, 80 ns, PDSO32
|
Sharp Electronics, Corp.
SHARP ELECTRONICS CORP
|
| AS8FLC1M32BP-70/IT AS8FLC1M32BQ-100/XT AS8FLC1M32B |
1M X 32 FLASH 3V PROM, 70 ns, CPGA66 HERMETIC SEALED, CERAMIC, HIP-66
1M X 32 FLASH 3V PROM, 100 ns, CQFP68
1M X 32 FLASH 3V PROM, 120 ns, CQFP68
|
Micross Components
|
| MN12261 MN12C25D MN12C201D |
128 X 16 MASK PROM, 6 ns, PDIP16 0.300 INCH, PLASTIC, DIP-16
38 X 16 MASK PROM, 2 ns, PSIP9
64 X 16 MASK PROM, 2 ns, PDIP16
|
Panasonic, Corp.
PANASONIC CORP
|
| 63S440 |
(63S440 / 63S441) High Performance 1024 x 4 PROM TiW PROM Family
|
MM
|
| PA28F008SC-90 E28F008SC-150 PA28F008SC-170 |
1M X 8 FLASH 3.3V PROM, 90 ns, PDSO44 13.30 X 28.20 MM, PLASTIC, SOP-44
1M X 8 FLASH 3.3V PROM, 150 ns, PDSO40
1M X 8 FLASH 3.3V PROM, 170 ns, PDSO44
|
Intel, Corp.
INTEL CORP
|
| M29F200FB55N6F2 M29F800FB55N3F2 M29F800FB55N3S2 M2 |
128K X 16 FLASH 5V PROM, 55 ns, PDSO48
512K X 16 FLASH 5V PROM, 55 ns, PDSO48
1M X 16 FLASH 5V PROM, 55 ns, PDSO48
128K X 16 FLASH 5V PROM, 55 ns, PDSO44
256K X 16 FLASH 5V PROM, 55 ns, PDSO48
|
NUMONYX
|
| AM29DL16XC AM29DL164CB80WCI AM29DL164CB120WCE AM29 |
Am29DL16xC - 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only. Simultaneous Operation Flash Memory Am29DL16xC - 16兆位米8 1个M x 16位）.0伏的CMOS只。同时作业闪
2M X 8 FLASH 3V PROM, 80 ns, PBGA48
2M X 8 FLASH 3V PROM, 120 ns, PBGA48
2M X 8 FLASH 3V PROM, 90 ns, PBGA48
|
AMIC Technology, Corp.
ADVANCED MICRO DEVICES INC
|
| M38510/21004BLX M38510/21004BLA M38510/21002SKC M3 |
x4 PROM x4胎膜早破
x8 PROM x8胎膜早破
|
Air Cost Control
Rochester Electronics, LLC
|
| S29GL032N90FAI033 S29GL032N90BAI043 S29GL032N70TAI |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 2M X 16 FLASH 3V PROM, 90 ns, PBGA64
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 2M X 16 FLASH 3V PROM, 90 ns, PBGA48
2M X 16 FLASH 3V PROM, 70 ns, PDSO56
2M X 16 FLASH 3V PROM, 90 ns, PDSO56
2M X 16 FLASH 3V PROM, 70 ns, PBGA64
2M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Spansion, Inc.
SPANSION LLC
|
| SST28SF040A-120-4I-EHE SST28SF040A-120-4C-EHE SST2 |
4 Mbit (512K x8) SuperFlash EEPROM
512K X 8 FLASH 2.7V PROM, 200 ns, PQCC32
512K X 8 FLASH 5V PROM, 90 ns, PDSO32
512K X 8 FLASH 5V PROM, 120 ns, PQCC32
512K X 8 FLASH 5V PROM, 120 ns, PDSO32
|
Silicon Storage Technol...
SILICON STORAGE TECHNOLOGY INC
|
| M39432-12VNC6T M39432-15VNC6T M39432-20VNC6T M3943 |
512K X 8 FLASH 3V PROM, 120 ns, PDSO40
512K X 8 FLASH 3V PROM, 150 ns, PDSO40
512K X 8 FLASH 3V PROM, 200 ns, PDSO40
512K X 8 FLASH 3V PROM, 250 ns, PDSO40
|
STMICROELECTRONICS
NUMONYX
|
|
