| PART |
Description |
Maker |
| KM416RD8AC KM418RD2AC KM418RD2AD KM418RD2C KM418RD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz).
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4R761869A-GCT9 K4R761869A-F K4R761869A-FBCCN1 K4R |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4R761869A-FBCCN1 K4R761869A-GCN1 K4R761869A-GCT9 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MR18R162CGMN0 |
(16Mx16)*12(16)pcs RIMMModule based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V Data Sheet
|
Samsung Electronic
|
| 6450130-5 |
MULTI-BEAM XL and MULTI-BEAM XLE - Power Distribution Connector System; MBXL R/A HDR 9P 32S 4P ( AMP )
|
Tyco Electronics
|
| 1450120-1 |
MULTI-BEAM XL and MULTI-BEAM XLE - Power Distribution Connector System; MBXL R/A HDR 8P 32S 8P ( AMP )
|
Tyco Electronics
|
| 1450100-6 |
MULTI-BEAM XL and MULTI-BEAM XLE - Power Distribution Connector System; MBXL VERT HDR 7P 32S 7P ( AMP )
|
Tyco Electronics
|
| MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF |
64M X 16 RAMBUS MODULE, DMA184
TVS 500W 6.5V BIDIRECT DO-15 6Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
16Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
(MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
