PART |
Description |
Maker |
MC-4216LFC721 |
3.3 V Operation 8M-Word By 72-Bit Dynamic RAM Module(工作电压.3V的动态RAM模块) 3.3 V工作电压800万字72位动态内存模块(工作电压.3伏的动态内存模块) 3.3 V Operation 8M-Word By 72-Bit Dynamic RAM Module(宸ヤ??靛?涓?.3V?????AM妯″?)
|
NEC, Corp. NEC Corp.
|
UPD44325084 UPD44325084F5-E50-EQ2 UPD44325094F5-E5 |
CABLE ASSEMBLY; LEAD-FREE SOLDER; SMA MALE TO SMA MALE; 50 OHM, RG142B/U COAX, DOUBLE SHIELDED 36M-BIT QDRII SRAM 4-WORD BURST OPERATION 36M条位推出QDRII SRAM4个字爆发运作 36M-BIT QDRII SRAM 4-WORD BURST OPERATION 36M条位推出QDRII SRAM个字爆发运作 4M X 8 QDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, PLASTIC, FBGA-165
|
NEC Corp. NEC, Corp.
|
UPD4217805LLE-A50 UPD42S17805LLE-A50 UPD4217805LG5 |
3.3V OPERATION 16 M-BIT DYNAMIC RAM 2M-WORD BY 8-BIT,EDO x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM 3.3V OPERATION 16 M-BIT DYNAMIC RAM 2M-WORD BY 8-BIT,HYPER PAGE MODE 3.3运行16位动态随机存储器2m-word8位,超页模式
|
NEC TOKIN America Inc. NEC TOKIN, Corp.
|
A29DL323TV-90 A29DL323UG-90 |
32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode)
|
http:// AMIC Technology Corporation
|
UPD44164362F5-E60-EQ1 UPD44164082 UPD44164082F5-E4 |
18M-BIT DDRII SRAM 2-WORD BURST OPERATION
|
NEC[NEC]
|
PD44164362BF5-E35-EQ3-A PD44164362BF5-E40-EQ3-A PD |
18M-BIT DDR II SRAM 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
MC-428LFF721 |
3.3 V Operation 16M-Word By 72-Bit Dynamic RAM Module(工作电压3.3V的动态RAM模块)
|
NEC Corp.
|
HM62V256 |
32,768-word ⅴ 8-bit Low Voltage Operation CMOS Static RAM
|
HITACHI[Hitachi Semiconductor]
|
MC-4216LFG641 |
3.3 V Operation 16M-Word By 72-Bit Dynamic RAM Module(工作电压.3V的动态RAM模块)
|
NEC Corp.
|
UPD4616112F9-B85LX-BC2 UPD4616112F9-B95LX-BC2 UPD4 |
16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
|
NEC Corp.
|
UPD444016LG5-A10Y-7JF UPD444016LG5-A12Y-7JF UPD444 |
4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
|
NEC Corp. NEC[NEC]
|