PART |
Description |
Maker |
GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28 x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28 2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28 x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28 2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL 2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
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M5M44400AWJ M5M44400ATP M5M44400ART M5M44400AL M5M |
FAST PAGE MODE 4194304 BIT DYNAMIC RAM 快速页面模194304位动态随机存储器 From old datasheet system (J/L/TP/RT) Fast Page Mode 4MBit DRAM
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
MSM51V16165D MSM51V16165DSL MSM51V16165D-70JS MSM5 |
1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO From old datasheet system DRAM / FAST PAGE MODE TYPE
|
OKI electronic components OKI[OKI electronic componets]
|
MSM51V17405A |
4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DRAM / FAST PAGE MODE TYPE
|
OKI electronic components OKI[OKI electronic componets]
|
KM44C256C KM44C256C-6 KM44C256C-7 KM44C256C-8 KM44 |
256k x 4Bit CMOS DRAM with Fast Page Mode 256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung Electronics Samsung semiconductor
|
MSM51V16160A |
DRAM / FAST PAGE MODE TYPE 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI SEMICONDUCTOR CO., LTD. OKI[OKI electronic componets] OKI electronic components
|
MSM51V16100 |
16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DRAM / FAST PAGE MODE TYPE
|
OKI electronic components OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD.
|
SST29EE512-70-4I-EH SST29LE512-70-4I-EH SST29VE512 |
512 Kbit (64K x 8) page-mode EEPROM 512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 EEPROM 3V, 200 ns, PDSO32 512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 EEPROM 5V, 70 ns, PDSO32 512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 3V PROM, 150 ns, PQCC32 512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8)页模式的EEPROM 512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8)页模式EEPROM 512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PQCC32 512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
SILICON STORAGE TECHNOLOGY INC Silicon Storage Technology, Inc.
|
IS41LV8205-50J IS41LV8205-50JI IS41LV8205-60JI IS4 |
2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
|
Integrated Silicon Solution, Inc. ISSI[Integrated Silicon Solution, Inc]
|
A64S06161AG-70UF A64S06161A A64S06161A-70U A64S061 |
16M(1M x 16bit) Normal mode & Page mode Static Random Access Memory
|
AMIC Technology Corporation AMICC[AMIC Technology]
|
MB82DBS04164E-70L |
64 Mbit Mobile FCRAM 1.8 V, Burst Mode & Page Mode
|
Fujitsu Component Limited. Fujitsu Media Devices Limited
|
K4F16708112D K4F160811D-B K4F160812D K4F160812D-B |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
|
Samsung Electronic
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