| PART |
Description |
Maker |
| AMB-2450HT-E1 AMB-2450HTT-E1 |
15 XGA (1024 x 768) Color TFT LCD
|
AAEON Technology
|
| NL128102AC23-02A |
39 cm 15.4 inches, 1280 x 1024 pixels, Full-color, Multi-scan Function Incorporated backlight with inverter
|
NEC[NEC]
|
| HT10401LHO |
LCD MODULE(1024 × RGB × 768)with AR Coated Glass Optical Bonding
LCD MODULE(1024 隆驴 RGB 隆驴 768)with AR Coated Glass Optical Bonding
|
HYES Optoelectronics, Inc.
|
| UPD43256 UPD43256-15 UPD43256-10L |
32,768 x 8-BIT STATIC MIX-MOS RAM 32,768 × 8位静态混合马鞍山内存
|
NEC, Corp.
NEC Corp.
|
| ZL50017 |
1024 x 1024 Channels Selectable Rate (2, 4, 8 Mbps) Non-blocking TDM Switch
|
ZARLINK
|
| TH7888AVRH TH7888AVRHRB TH7888A TH7888AVRHN |
Area Array CCD, 1024 x 1024 pixels with Antiblooming, 2 x 20 MHz
AREA ARRAY CCD IMAGE SENSOR 1024 X 1024 PIXELS WITH ANTIBLOOMING
Area Array CCD Image Sensor (1024 x 1024 Pixels with Antiblooming)
|
ATMEL[ATMEL Corporation]
|
| AD5231BRU10 AD5231BRUZ100-REEL7 |
100K DIGITAL POTENTIOMETER, 3-WIRE SERIAL CONTROL INTERFACE, 1024 POSITIONS, PDSO16
Nonvolatile, Single, 1024-Position Digital Potentiometer
|
ANALOG DEVICES INC
|
| TC55257DFL-55L TC55257DFL-55V TC55257DFL-70L TC552 |
32K X 8 STANDARD SRAM, 120 ns, PDSO28
MOS DIGITAL INTEGRATED CIRCUIT 马鞍山数字集成电
32,768 WORD-8 BIT STATIC RAM 32,768字，8位静态RAM
32,768-WORD BY 8-BIT STATIC RAM
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| IDT72510 IDT72510L25J IDT72510L35J IDT72510L50J ID |
BUS-MATCHING BIDIRECTIONAL FIFO 512 x 18-BIT . 1024 x 9-BIT 1024 x 18-BIT . 2048 x 9-BIT
|
IDT[Integrated Device Technology]
|
| MSM51257CLL |
32,768-Word ?8-Bit CMOS STATIC RAM(32k瀛??浣????AM)
32,768-Word x 8-Bit CMOS STATIC RAM
From old datasheet system
32,768-Word ×8-Bit CMOS STATIC RAM(32k字位静态RAM)
|
OKI SEMICONDUCTOR CO., LTD.
|
| KT872N15 KT872N55 KT872P51 KT872P55 KT872T55 KT872 |
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches. Electrical parameter A lead spacing .320 inches. Aperture width in front of sensor .010 inches. Aperture width in front of emitter .
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter A lead spacing .320inches. Aperture in front of sensor .050inches. Aperture width in front of emitter
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .01
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .05
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .05
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .320inches. Aperture in front of sensor .050inches. Aperture in front of emitter .050i
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter A lead spacing .320inches. Aperture width in front of sensor .050inches. Aperture in front of emitter
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .0
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .05
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .05
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .05
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .01
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .05
|
Optek Technology
|
