| PART |
Description |
Maker |
| GE28F256L18B85 GE28F256L18T85 GE28F128L18T85 PH28F |
1.8V, 85ns, 256Mbit StrataFlash Wireless Memory
1.8V, 85ns, 128Mbit StrataFlash Wireless Memory
1.8V, 85ns, 128Mbit lead-free StrataFlash Wireless Memory
|
Intel
|
| IDT72V8981 IDT72V8981DB IDT72V8981J IDT72V8981J8 7 |
From old datasheet system
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 128 x 128
128 x 128 TSI, 4 I/O at 2Mbps, Variable Delay, 3.3V
|
Integrated Device Technology
IDT
|
| IDT728981 IDT728981DB IDT728981P IDT728981J |
128 x 128 TSI, 4 I/O at 2Mbps, Variable Delay, 5.0V
TSI-TDM Switches
TIME SLOT INTERCHANGE DIGITAL SWITCH 128 x 128
|
IDT[Integrated Device Technology]
|
| HYE25L128160AC-8 HYB25L128160AC-75 |
128-MBIT SYNCHRONOUS LOW-POWER DRAM IN CHIPSIZE PACKAGES 128 - Mbit同步低功率DRAMCHIPSIZE套票
|
Infineon Technologies A...
Infineon Technologies AG
|
| M39P0R9070E2 M39P0R9070E2ZADE M39P0R9070E2ZADF |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
| M58LR128KB |
(M58LRxxxKx) 128 or 256 Mbit 1.8 V supply Flash memories
|
Numonyx
|
| M29W128GH M29W128GH60N6E M29W128GH60N6F M29W128GH6 |
128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block) 3 V supply Flash memory
|
Numonyx B.V
|
| M58LT128HSB M58LT128HSB8ZA6 M58LT128HSB8ZA6E M58LT |
128 Mbit (8 Mb ×16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories
|
Numonyx B.V
|
| M30L0R7000B0ZAQE M30L0R7000B0ZAQF M30L0R7000B0ZAQT |
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
|
ST Microelectronics
|
| M58LW128BZA M58LW128A M58LW128A150N1E M58LW128A150 |
128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| M58LR128GT |
128 Mbit (8Mb x16- Multiple Bank Multi-Level - Burst) 1.8V Supply Flash Memory
|
STMicroelectronics
|
