PART |
Description |
Maker |
HYB18L256160B |
DRAMs for Mobile Applications 256-Mbit Mobile-RAM DRAM的针对移动应56兆移动RAM
|
Qimonda AG
|
HYE18L512320BF-7.5 HYB18L512320BF-7.5 |
DRAMs for Mobile Applications 512-Mbit SDR Mobile-RAM
|
http:// Qimonda AG
|
HYB18M512160BF-6 HYB18M512160BF-7.5 HYE18M512160BF |
DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant
|
Qimonda AG
|
HYE18L512160BF-7.5 HYB18L512160BF-7.5 |
DRAMs for Mobile Applications 512-Mbit Mobile-RAM
|
Qimonda AG
|
CY62147EV30LL-45BVXA |
4-Mbit (256 K x 16) Static RAM
|
Cypress Semiconductor
|
FM22LD16-55-BGTR |
4-Mbit (256 K 16) F-RAM Memory
|
Cypress
|
CY62138FV30 CY62138FV30LL-45ZAXI CY62138FV30LL-45Z |
2-Mbit (256 K x 8) Static RAM Automatic power down when deselected
|
Cypress Semiconductor
|
CY62138FLL-45ZSXI CY62138FLL-45SXI |
2-Mbit (256 K x 8) Static RAM Automatic power down when deselected
|
Cypress Semiconductor
|
AM41LV3204M M410000095 M410000096 AM41LV3204MT10IT |
Stacked Multi-chip Package (MCP) 32 Mbit (4 M x 8 bit/2 M x 16-bit) Flash Memory and 4 Mbit (512K x 8-Bit/256 K x 16-Bit) Static RAM
|
SPANSION[SPANSION] AMD[Advanced Micro Devices]
|
IS42S32800B-6B IS42S32800B-6BLI IS42S32800B-6T IS4 |
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
M58LR128GU |
The M58LR128GU/L and M58LR256GU/L are 128 Mbit (8 Mbit x16) and 256 Mbit (16 Mbit
|
ST Microelectronics, Inc.
|
HYE25L256160AC-7.5 HYE25L256160AF-7.5 HYB25L256160 |
256-MBit Mobile-RAM 16M X 16 SYNCHRONOUS DRAM, 7.5 ns, PBGA54 12 X 8 MM, GREEN, PLASTIC, TFBGA-54 16M X 16 SYNCHRONOUS DRAM, 7.5 ns, PBGA54 12 X 8 MM, PLASTIC, TFBGA-54
|
Qimonda AG
|