PART |
Description |
Maker |
FRM5W621LT FRM5W621KT |
InGaAs-APD/Preamp Receiver
|
EUDYNA[Eudyna Devices Inc]
|
FRM5N141GT |
InGaAs-APD/Preamp Receiver
|
Eudyna Devices Inc
|
FRM5W232LY |
InGaAs-APD/Preamp Receiver
|
EUDYNA[Eudyna Devices Inc]
|
FU-319SPA-CV6 |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE
|
Mitsubishi Electric Sem...
|
FU-319SPA-W6M20 319SPA-V6M20 319SPA-W6M20 319SPA-X |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE 铟镓砷APD的前置放大器模块,用.31微米.55 UM的波长范
|
Mitsubishi Electric Sem... Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
|
NR8360JP-BC |
InGaAs APD for OTDR applications. With FC-UPC connector. 30 um InGaAs APD IN DIP PACKAGE FOR OTDR APPLICATION
|
NEC CEL[California Eastern Labs]
|
FRM3Z232BS-A |
InGaAs-PIN/Preamp Preamp InGaAs-PIN/Preamp前置放大
|
Sumitomo Electric Industries, Ltd.
|
G8931-04 |
InGaAs APD
|
Hamamatsu Corporation
|
G8931-20 |
InGaAs APD
|
Hamamatsu Corporation
|
G10342-54 G10342-14 |
InGaAs PIN photodiode with preamp
|
Hamamatsu Corporation
|
NR8360JP-BC |
30 um InGaAs APD IN DIP PACKAGE FOR OTDR APPLICATION
|
California Eastern Laboratories
|
NR8501FR-CB-AZ NR8501 NR8501CP-BC-AZ NR8501CP-CC-A |
NECs 50 μm InGaAs APD IN COAXIAL PACKAGE FOR 2.5Gb/s APPLICATIONS
|
CEL[California Eastern Labs]
|