| PART |
Description |
Maker |
| BAS3010A-03W |
Medium Power AF Schottky Diode
|
Infineon Technologies AG
|
| BAT760 BAT76013 |
Medium power Schottky barrier single diode
|
NXP Semiconductors
|
| MSKM-716-Q2 MSKM-717-Q2 MSS-40455-H40 |
SILICON, MEDIUM BARRIER SCHOTTKY, S BAND, MIXER DIODE
SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
|
|
| 5082-2817 |
MEDIUM BARRIER SCHOTTKY DIODE
|
http://
ASI[Advanced Semiconductor]
|
| DMJ4771-000 DME2029-000 DME2031-000 DME2029-255 DM |
SILICON, HIGH BARRIER SCHOTTKY, KU BAND, MIXER DIODE
SILICON, MEDIUM BARRIER SCHOTTKY, S BAND, MIXER DIODE
SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE
|
|
| NTLUF4189NZ NTLUF4189NZTAG NTLUF4189NZTBG |
Power MOSFET and Schottky Diode 30 V, N−Channel with 0.5 A Schottky Barrier Diode, 1.6 x 1.6 x 0.55 mm Cool Package
|
ON Semiconductor
|
| BAT60A Q62702-A1188 |
Silicon Schottky Diode (Rectifier Schottky diode with extreme low VF drop for mobile communication For power supply 硅肖特基二极管（肖特基二极管整流极端VF为移动通信电源供应下降
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| NTLJF1103P NTLJF1103PT1G |
Power MOSFET Schottky Diode
Power MOSFET and Schottky Diode -8 V, -4.3 A, μCool? P-Channel, with 2.0 A Schottky Barrier Diode, 2 x 2 mm, WDFN
|
ON Semiconductor
|
| 1N1199ASERIES 1N3670ASERIES 1N1203A 1N1202A 1N3673 |
50V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
12 AMP MEDIUM POWER SILICON RECTIFIER DIODES
13 AM MEDIUM POWER SILICON RECTIFIER DIODES
12 AM MEDIUM POWER SILICON RECTIFIER DIODES
400V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
|
IRF[International Rectifier]
|
