Part Number Hot Search : 
SI3152V 71256 15T1G Z1360AI SW1215 R3060 MUR1605 VTT1015
Product Description
Full Text Search

2N4416A08 - N-CHANNEL J-FET

2N4416A08_2804551.PDF Datasheet

 
Part No. 2N4416A08
Description N-CHANNEL J-FET

File Size 36.24K  /  1 Page  

Maker


Microsemi Corporation



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: 2N4416A
Maker: MOT
Pack: CAN4
Stock: 6835
Unit price for :
    50: $2.15
  100: $2.04
1000: $1.94

Email: oulindz@gmail.com

Contact us

Homepage http://www.microsemi.com
Download [ ]
[ 2N4416A08 Datasheet PDF Downlaod from Datasheet.HK ]
[2N4416A08 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for 2N4416A08 ]

[ Price & Availability of 2N4416A08 by FindChips.com ]

 Full text search : N-CHANNEL J-FET


 Related Part Number
PART Description Maker
MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS 7 E-FET™ High Energy Power FET
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
ON Semiconductor
PHU78NQ03LT PHP78NQ03LT N-channel TrenchMOS logic level FET
N-channel TrenchMOSTM logic level FET 75 A, 25 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
PHP160NQ08T PHB160NQ08T CAP 0.1UF 100V 10% X7R AXIAL TR-14 75 A, 75 V, 0.0056 ohm, N-CHANNEL, Si, POWER, MOSFET
N-channel TrenchMOS standard level FET
N-channel Trenchmos (tm) standard level FET
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
MTB2N40E MTB2N40E-D TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 400 VOLTS
ON Semiconductor
MOTOROLA[Motorola, Inc]
MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06 TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
ON Semiconductor
MOTOROLA[Motorola, Inc]
http://
MTB3N120E_D ON2421 MTB3N120E MTB3N120E-D TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 1200 VOLTS
From old datasheet system
ON Semiconductor
MOTOROLA[Motorola, Inc]
IRFU420B IRFR420B IRFU420BTU IRFR420BTM IRFR420BTF 500V N-Channel B-FET / Substitute of IRFR420 & IRFR420A
500V N-Channel B-FET / Substitute of IRFU420 & IRFU420A
500V N-Channel MOSFET 2.3 A, 500 V, 2.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
FAIRCHILD[Fairchild Semiconductor]
International Rectifier
Fairchild Semiconductor, Corp.
2SK1274 2SK1274-T N-channel power MOS FET
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
NEC[NEC]
2SK1273 2SK1273-T2 2SK1273-T1 N-channel power MOS FET
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
NEC[NEC]
MMFT2N25E-D TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
 
 Related keyword From Full Text Search System
2N4416A08 tdma modulator 2N4416A08 DIFFERENTIAL CLOCK 2N4416A08 应用线路 2N4416A08 Interrupt 2N4416A08 type
2N4416A08 purpose 2N4416A08 memory 2N4416A08 motorola 2N4416A08 gdcy 2N4416A08 nec
 

 

Price & Availability of 2N4416A08

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
3.3834590911865