| PART |
Description |
Maker |
| MX23C8000 MX23C8000MC-10 MX23C8000MC-12 MX23C8000M |
8M-BIT [1M x 8] CMOS MASK ROM 1M X 8 MASK PROM, 150 ns, PDIP32
8M-BIT [1M x 8] CMOS MASK ROM 1M X 8 MASK PROM, 120 ns, PDIP32
8M-BIT [1M x 8] CMOS MASK ROM 1M X 8 MASK PROM, 200 ns, PQCC32
8M-BIT [1M x 8] CMOS MASK ROM 1M X 8 MASK PROM, 100 ns, PQCC32
8M-BIT [1M x 8] CMOS MASK ROM 1M X 8 MASK PROM, 120 ns, PQCC32
|
Macronix International Co., Ltd.
|
| UPD23C1000A |
Mask Programmable CMOS ROM
|
NEC Electronics
|
| UM23C4000 UM23C4001 |
CMOS Mask-Programmable ROM
|
UMC
|
| UM23C1024 UM23C2001 |
CMOS Mask-Programmable ROM
|
UMC
|
| UPD23C256E-1 UPD23C256E |
32,368 x 8-BIT MASK-PROGRAMMABLE CMOS ROM
|
NEC[NEC]
|
| HN62334BTT-15 |
524288-word x 8-bit CMOS Mask Programmable ROM
|
Hitachi,Ltd.
|
| HT23C512 23C512 |
CMOS 64Kx 8-Bit Mask ROM
From old datasheet system
CMOS 64K′ 8-Bit Mask ROM
|
HOLTEK[Holtek Semiconductor Inc]
|
| HN613256FP HN613256P HN613256 |
word x 8-bit CMOS Mask Programmable Read Only Memory
32768 word x 8 Bit CMOS Programmable ROM
|
Hitachi Semiconductor
Renesas Technology
|
| LH5324500 LH5324500N |
CMOS 24M(3M x 8/1,5M X 16) Mask-Programmable ROM
CMOS 24M (3M x 8/1.5M x 16) MROM
|
Sharp Electrionic Components
Sharp Corporation
|
| LH534A00 LH534A00T |
CMOS 4M(512K X 8) Mask-Programmable ROM
CMOS 4M (512K x 8) MROM
Lens Cap; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No
|
Sharp Electrionic Components
Sharp Corporation
|
| K3P6C2000B-SC |
32M-Bit (2Mx16 /1Mx32) CMOS MASK ROM 32兆位Mx16 / 1Mx32）的CMOS掩膜ROM
32M-Bit (2Mx16/1Mx32) CMOS MASK ROM Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| GM23C4000BFW-12 GM23C4000BFW-10 GM23C4000BFW-15 |
x8 ROM (Mask Programmable) x8光盘（掩模可编程
|
Hynix Semiconductor, Inc.
L-com, Inc.
|
