Part Number Hot Search : 
90N03 AD539J AF126 10024 EL7583IR MSDW1043 CS61584A GROUP
Product Description
Full Text Search

M29W641DH12ZA1E - 4M X 16 FLASH 3V PROM, 70 ns, PDSO48 Low-Power Single Bus Buffer Gate with 3-State Output 5-SC70 -40 to 85 64兆位4Mb的x16插槽,统一3V电源快闪记忆 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory 64兆位4Mb的x16插槽,统一3V电源快闪记忆 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory 64兆位4Mb的x16插槽,统一V电源快闪记忆 Low-Power Single 2-Input Positive-AND Gate 5-SC70 -40 to 85 64兆位4Mb的x16插槽,统一V电源快闪记忆 Low-Power Single Schmitt-Trigger Buffer 5-SOT-23 -40 to 85 64兆位4Mb的x16插槽,统一V电源快闪记忆 Shielded Multiconductor Cable; Number of Conductors:25; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes Shielded Multiconductor Cable; Number of Conductors:15; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes Shielded Multiconductor Cable; Number of Conductors:10; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes Low-Power Single 2-Input Positive-AND Gate 5-SOT-23 -40 to 85 Shielded Multiconductor Cable; Number of Conductors:10; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Shielding Material:Aluminum Foil/Polyester Tape/Tinned Copper Braid RoHS Compliant: Yes 64 Mbit 4Mb x16 / Uniform Block 3V Supply Flash Memory Low-Power Single Buffer/Driver with Open-Drain Outputs 5-DSBGA -40 to 85

M29W641DH12ZA1E_2772577.PDF Datasheet

 
Part No. M29W641DH12ZA1E M29W641DH12ZA1F M29W641DH12ZA6E M29W641DH12ZA6F M29W641DH12ZA6T M29W641DL12ZA1E M29W641DL12ZA1F M29W641DL12ZA6E M29W641DL12ZA6F M29W641DL12ZA6T M29W641DU12ZA1E M29W641DU70N1E M29W641DU70N1F M29W641DU70N6E M29W641DU70N6F M29W641DU70ZA1E M29W641DU70ZA1F M29W641DU70ZA6E M29W641DU70ZA6F M29W641DU70ZA6T M29W641DH10N1E M29W641DH10N1F M29W641DH10N6E M29W641DH10N6F M29W641DH10N6T M29W641DH10ZA1E M29W641DH10ZA6T M29W641DH12N1E M29W641DH12N1F M29W641DH12N6F M29W641DH12N6T
Description 4M X 16 FLASH 3V PROM, 70 ns, PDSO48
Low-Power Single Bus Buffer Gate with 3-State Output 5-SC70 -40 to 85 64兆位4Mb的x16插槽,统一3V电源快闪记忆
64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory 64兆位4Mb的x16插槽,统一3V电源快闪记忆
64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory 64兆位4Mb的x16插槽,统一V电源快闪记忆
Low-Power Single 2-Input Positive-AND Gate 5-SC70 -40 to 85 64兆位4Mb的x16插槽,统一V电源快闪记忆
Low-Power Single Schmitt-Trigger Buffer 5-SOT-23 -40 to 85 64兆位4Mb的x16插槽,统一V电源快闪记忆
Shielded Multiconductor Cable; Number of Conductors:25; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes
Shielded Multiconductor Cable; Number of Conductors:15; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes
Shielded Multiconductor Cable; Number of Conductors:10; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes
Low-Power Single 2-Input Positive-AND Gate 5-SOT-23 -40 to 85
Shielded Multiconductor Cable; Number of Conductors:10; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Shielding Material:Aluminum Foil/Polyester Tape/Tinned Copper Braid RoHS Compliant: Yes
64 Mbit 4Mb x16 / Uniform Block 3V Supply Flash Memory
Low-Power Single Buffer/Driver with Open-Drain Outputs 5-DSBGA -40 to 85

File Size 344.13K  /  42 Page  

Maker

NUMONYX
STMicroelectronics N.V.
意法半导
ST Microelectronics



Homepage
Download [ ]
[ M29W641DH12ZA1E M29W641DH12ZA1F M29W641DH12ZA6E M29W641DH12ZA6F M29W641DH12ZA6T M29W641DL12ZA1E M29W Datasheet PDF Downlaod from Datasheet.HK ]
[M29W641DH12ZA1E M29W641DH12ZA1F M29W641DH12ZA6E M29W641DH12ZA6F M29W641DH12ZA6T M29W641DL12ZA1E M29W Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for M29W641DH12ZA1E ]

[ Price & Availability of M29W641DH12ZA1E by FindChips.com ]

 Full text search : 4M X 16 FLASH 3V PROM, 70 ns, PDSO48 Low-Power Single Bus Buffer Gate with 3-State Output 5-SC70 -40 to 85 64兆位4Mb的x16插槽,统一3V电源快闪记忆 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory 64兆位4Mb的x16插槽,统一3V电源快闪记忆 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory 64兆位4Mb的x16插槽,统一V电源快闪记忆 Low-Power Single 2-Input Positive-AND Gate 5-SC70 -40 to 85 64兆位4Mb的x16插槽,统一V电源快闪记忆 Low-Power Single Schmitt-Trigger Buffer 5-SOT-23 -40 to 85 64兆位4Mb的x16插槽,统一V电源快闪记忆 Shielded Multiconductor Cable; Number of Conductors:25; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes Shielded Multiconductor Cable; Number of Conductors:15; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes Shielded Multiconductor Cable; Number of Conductors:10; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes Low-Power Single 2-Input Positive-AND Gate 5-SOT-23 -40 to 85 Shielded Multiconductor Cable; Number of Conductors:10; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Shielding Material:Aluminum Foil/Polyester Tape/Tinned Copper Braid RoHS Compliant: Yes 64 Mbit 4Mb x16 / Uniform Block 3V Supply Flash Memory Low-Power Single Buffer/Driver with Open-Drain Outputs 5-DSBGA -40 to 85
 Product Description search : 4M X 16 FLASH 3V PROM, 70 ns, PDSO48 Low-Power Single Bus Buffer Gate with 3-State Output 5-SC70 -40 to 85 64兆位4Mb的x16插槽,统一3V电源快闪记忆 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory 64兆位4Mb的x16插槽,统一3V电源快闪记忆 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory 64兆位4Mb的x16插槽,统一V电源快闪记忆 Low-Power Single 2-Input Positive-AND Gate 5-SC70 -40 to 85 64兆位4Mb的x16插槽,统一V电源快闪记忆 Low-Power Single Schmitt-Trigger Buffer 5-SOT-23 -40 to 85 64兆位4Mb的x16插槽,统一V电源快闪记忆 Shielded Multiconductor Cable; Number of Conductors:25; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes Shielded Multiconductor Cable; Number of Conductors:15; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes Shielded Multiconductor Cable; Number of Conductors:10; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes Low-Power Single 2-Input Positive-AND Gate 5-SOT-23 -40 to 85 Shielded Multiconductor Cable; Number of Conductors:10; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Shielding Material:Aluminum Foil/Polyester Tape/Tinned Copper Braid RoHS Compliant: Yes 64 Mbit 4Mb x16 / Uniform Block 3V Supply Flash Memory Low-Power Single Buffer/Driver with Open-Drain Outputs 5-DSBGA -40 to 85


 Related Part Number
PART Description Maker
AM29LV800DB-70EF AM29LV800DB-90EF AM29LV800DB-70WC Flash Memory IC; Memory Size:8Mbit; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70nS; Series:AM29 RoHS Compliant: Yes 512K X 16 FLASH 3V PROM, 70 ns, PDSO48
512K X 16 FLASH 3V PROM, 90 ns, PDSO48
512K X 16 FLASH 3V PROM, 70 ns, PBGA48
512K X 16 FLASH 3V PROM, 90 ns, PBGA48
512K X 16 FLASH 3V PROM, 120 ns, PDSO48
512K X 16 FLASH 3V PROM, 120 ns, PDSO44
512K X 16 FLASH 3V PROM, 90 ns, PDSO44
Spansion, Inc.
SPANSION LLC
SST39VF010-90-4C-B3KE SST39VF040-90-4C-WHE SST39VF 128K X 8 FLASH 2.7V PROM, 90 ns, PBGA48
512K X 8 FLASH 2.7V PROM, 90 ns, PDSO32
512K X 8 FLASH 2.7V PROM, 90 ns, PQCC32
64K X 8 FLASH 2.7V PROM, 90 ns, PDSO32
256K X 8 FLASH 2.7V PROM, 90 ns, PDSO32
SILICON STORAGE TECHNOLOGY INC
DP5Z1MM16PI3-12C DP5Z1MM16PJ3-12B DP5Z1MW16PA3-12B 1M X 16 FLASH 5V PROM, 120 ns, CQIP48 HERMETIC SEALED, STRAIGHT, SLCC-48
1M X 16 FLASH 5V PROM, 120 ns, CQCC48
1M X 16 FLASH 5V PROM, 120 ns, CPGA50
1M X 16 FLASH 5V PROM, 150 ns, CQCC48

AS8FLC2M32BP-70/IT 5962-0824504HXC 5962-0824502HXC 2M X 32 FLASH 3V PROM, 70 ns, CPGA66 HERMETIC SEALED, CERAMIC, HIP-66
2M X 32 FLASH 3V PROM, 70 ns, CQFP68
2M X 32 FLASH 3V PROM, 100 ns, CQFP68
Micross Components
S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI 4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56
2M X 16 FLASH 3V PROM, 100 ns, PBGA56
4M X 16 FLASH 3V PROM, 90 ns, PBGA64
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes
4M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 100 ns, PDSO48
Spansion, Inc.
SPANSION LLC
GLS37VF040-70-3C-NHE SST37VF020-70-3C-PHE SST37VF0 -bit AVR Microcontroller with 8K Bytes In- System Programmable Flash
256K X 8 FLASH 2.7V PROM, 70 ns, PQCC32
128K X 8 FLASH 2.7V PROM, 70 ns, PDIP32
SILICON STORAGE TECHNOLOGY INC
AS8FLC1M32BQT-90_IT AS8FLC1M32BQT-90_Q AS8FLC1M32B Hermetic, Multi-Chip Module (MCM) 32Mb, 1M x 32, 3.0Volt Boot Block FLASH Array
1M X 32 FLASH 3V PROM, 70 ns, CPGA66 HIP-66
1M X 32 FLASH 3V PROM, 100 ns, CQFP68
http://
Austin Semiconductor, Inc
MICROSS COMPONENTS
SST25VF040-20-4C-S2AE SST25VF020-20-4C-SAE SST25VF 4M X 1 FLASH 2.7V PROM, PDSO8
4 Mbit Uniform Sector, Serial Flash Memory
4M X 1 FLASH 2.7V PROM, DSO8
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
MBM29LV160BE70TN MBM29LV160BE70TR MBM29LV160BE70PB 16M (2M X 8/1M X 16) BIT 2M X 8 FLASH 3V PROM, 120 ns, PBGA48
KPT 23C 22#20 1#16 SKT PLUG 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
16M (2M X 8/1M X 16) BIT 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
Central Semiconductor, Corp.
Fujitsu, Ltd.
Fujitsu Limited
http://
Fujitsu Component Limited.
W29EE012 W39L020P-70 W39L020P-70B W39L020P-90 W39L 128K X 8 FLASH 5V PROM, 90 ns, PQCC32
128K X 8 FLASH 5V PROM, 90 ns, PDSO32
128K X 8 CMOS FLASH MEMORY 256K X 8 FLASH 3.3V PROM, 90 ns, PDSO32
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
E28F008S5-90 PA28F008S5-90 1M X 8 FLASH 5V PROM, 90 ns, PDSO40 10 X 20 MM, TSOP-40
1M X 8 FLASH 5V PROM, 90 ns, PDSO44 13.30 X 28.20 MM, PLASTIC, SOP-44
Intel, Corp.
Numonyx Asia Pacific Pte, Ltd.
 
 Related keyword From Full Text Search System
M29W641DH12ZA1E ptc data M29W641DH12ZA1E saw filter M29W641DH12ZA1E dropout M29W641DH12ZA1E Transistor M29W641DH12ZA1E filetype:pdf
M29W641DH12ZA1E transistor M29W641DH12ZA1E Pulse M29W641DH12ZA1E Phase M29W641DH12ZA1E corporation M29W641DH12ZA1E asynchronous
 

 

Price & Availability of M29W641DH12ZA1E

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.83840608596802