| PART |
Description |
Maker |
| MK4096-11 MK4096K-11 MK4096K-16 MK4096K-6 |
4096 X 1-Bit DRAM
|
Mostek
|
| SRI4K11 SRI4K SRI4K-SBN18/1GE |
4096-bit ISO14443-B contactless memory with 2 binary counters and anti-collision
13.56 MHz short-range contactless memory chip with 4096-bit EEPROM and anticollision functions
|
ST Microelectronics
STMicroelectronics
|
| HYB3165805ATL-60 HYB3165805ATL-50 HYB3165805ATL-40 |
4M x 16 Bit 4k EDO DRAM Low Power
8M x 8 Bit 4k EDO DRAM
8M x 8 Bit 8k EDO DRAM
8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| Q67100-Q2039 HYB314100BJ-50 HYB314100BJ-60 HYB3141 |
4M x 1 Bit FPM DRAM 3.3 V 60 ns
4M x 1 Bit FPM DRAM 3.3 V 50 ns
-4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
4M x 1 Bit FPM DRAM 3.3 V 70 ns
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| GM71V17403C GM71V17403C-5 GM71V17403C-6 GM71V17403 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M
x4 EDO Page Mode DRAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| MCM2532 MCM2532C |
4096 x 8-BIT UV ERASABLE PROM
|
Motorola, Inc
|
| UPB424C UPB424D |
4096 BIT BIPOLAR TTL
|
NEC
|
| TMM315D |
4096 Word x 1 Bit Static RAM
|
Toshiba
|
| MBM2147H |
MOS 4096-Bit Static RAM
|
Fujitsu
|
| UPD791 |
4096-BIT CCD IMAGE SENSOR
|
NEC
|
| NM93CS66 |
(MICROWIRE⑩ Bus Interface) 4096-Bit Serial EEPROM with Data Protect and Sequential Read
(MICROWIRE Bus Interface) 4096-Bit Serial EEPROM with Data Protect and Sequential Read
|
FAIRCHILD[Fairchild Semiconductor]
|
| XLS93C66 |
4096-Bit Serial Electrically Erasable PROM
|
Exel Microelectronics
|
