PART |
Description |
Maker |
7MBP200VEA120-50 |
IGBT MODULE (V series) 1200V / 200A / IPM
|
Fuji Electric
|
200CNQ045 200CNQ040 200CNQ 200CNQ035 |
45V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package 40V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package 35V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package SCHOTTKY RECTIFIER SCHOTTKYRECTIFIER PLT LIGHT LENS 24 VAC/DC RED LED
|
IRF[International Rectifier] InternationalRectifier
|
IRKHF200-02GP IRKKF200-06HP IRKHF200-06GP IRKHF200 |
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|200V V(RRM)|200A I(T) THYRISTOR MODULE|DOUBLER|CC|600V V(RRM)|200A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.2KV V(RRM)|200A I(T) THYRISTOR MODULE|DOUBLER|CC|400V V(RRM)|200A I(T) THYRISTOR MODULE|SCR|DUAL|CA|200V V(RRM)|200A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|400V V(RRM)|200A I(T) THYRISTOR MODULE|DOUBLER|CC|800V V(RRM)|200A I(T) THYRISTOR MODULE|DOUBLER|CA|400V V(RRM)|200A I(T) THYRISTOR MODULE|SCR|DUAL|CA|600V V(RRM)|200A I(T) 晶闸管模块|可控硅|双|加利福尼亚州| 600V的五(无线资源管理)| 200安培我(翻译 THYRISTOR MODULE|SCR DOUBLER|200V V(RRM)|200A I(T) 晶闸管模块|可控硅倍增| 200伏五(无线资源管理)| 200安培我(翻译 THYRISTOR MODULE|SCR DOUBLER|400V V(RRM)|200A I(T) 晶闸管模块|可控硅倍增器| 400V五(无线资源管理)| 200安培我(翻译 THYRISTOR MODULE|SCR DOUBLER|600V V(RRM)|200A I(T) 晶闸管模块|可控硅倍增器| 600V的五(无线资源管理)| 200安培我(翻译 THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|400V V(RRM)|200A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 400V五(无线资源管理)| 200安培我(翻译 THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|200V V(RRM)|200A I(T) 晶闸管模块|倍增|半CNTLD |负| 200伏五(无线资源管理)| 200安培我(翻译 THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|600V V(RRM)|200A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 600V的五(无线资源管理)| 200安培我(翻译 THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|600V V(RRM)|200A I(T) 晶闸管模块|倍增|半CNTLD |负| 600V的五(无线资源管理)| 200安培我(翻译 THYRISTOR MODULE|SCR|DUAL|CA|400V V(RRM)|200A I(T) 晶闸管模块|可控硅|双|加利福尼亚州| 400V五(无线资源管理)| 200安培我(翻译 THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|800V V(RRM)|200A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 800V的五(无线资源管理)| 200安培我(翻译 THYRISTOR MODULE|DOUBLER|CC|1.2KV V(RRM)|200A I(T) 晶闸管模块|倍增|消委会| 1.2KV五(无线资源管理)| 200安培我(翻译 THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.2KV V(RRM)|200A I(T) 晶闸管模块|倍增|半CNTLD |负| 1.2KV五(无线资源管理)| 200安培我(翻译 THYRISTOR MODULE|SCR|DUAL|CC|600V V(RRM)|200A I(T) 晶闸管模块|可控硅|双|消委会| 600V的五(无线资源管理)| 200安培我(翻译 THYRISTOR MODULE|DOUBLER|CC|1KV V(RRM)|200A I(T) 晶闸管模块|倍增|消委会| 1KV交五(无线资源管理)| 200安培我(翻译 THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1KV V(RRM)|200A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 1KV交五(无线资源管理)| 200安培我(翻译 THYRISTOR MODULE|DOUBLER|CC|200V V(RRM)|200A I(T) 晶闸管模块|倍增|消委会| 200伏五(无线资源管理)| 200安培我(翻译 THYRISTOR MODULE|SCR DOUBLER|800V V(RRM)|200A I(T) 晶闸管模块|可控硅倍增器| 800V的五(无线资源管理)| 200安培我(翻译 THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1KV V(RRM)|200A I(T) THYRISTOR MODULE|SCR|DUAL|CC|1KV V(RRM)|200A I(T) THYRISTOR MODULE|SCR DOUBLER|1KV V(RRM)|200A I(T) THYRISTOR MODULE|DOUBLER|CA|1KV V(RRM)|200A I(T)
|
Microchip Technology, Inc. STMicroelectronics N.V. IXYS, Corp. Glenair, Inc. L-com, Inc. Powerex, Inc.
|
CMBA847G CMBA847E CMBA847F |
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 400 - 800 hFE. 0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 250 - 500 hFE. 0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 150 - 300 hFE. TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SOT-23
|
Continental Device India Limited
|
201CNQ020 201CNQ030 200CNQ030 |
V(rwm): 20V; 200A schottky center tap rectifier module V(rwm): 30V; 200A schottky center tap rectifier module
|
International Rectifier
|
CMBA857E CMBA857F |
0.200W General Purpose PNP SMD Transistor. 50V Vceo, 0.200A Ic, 150 - 300 hFE. 0.200W General Purpose PNP SMD Transistor. 50V Vceo, 0.200A Ic, 250 - 500 hFE.
|
Continental Device India Limited
|
C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2 |
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 200.000A Ic, 40 - 250 hFE. 10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 250 hFE. 10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 160 - 250 hFE. 10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 60 - 120 hFE. 10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 80 hFE. 10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 100 - 200 hFE.
|
Continental Device India Limited
|
2MBI200S-120 |
1200V / 200A 2 in one-package
|
List of Unclassifed Manufacturers Fuji Electric
|
30PRA20 |
FRD - 3A 200A 90ns
|
ETC NIEC[Nihon Inter Electronics Corporation]
|
PDH2008 PDT2008 |
THYRISTOR MODULE 200A / 800V
|
Nihon Inter Electronics Corporation
|