PART |
Description |
Maker |
BT139-800127 |
Triacs - I<sub>GT</sub>: 35 mA; I<sub>T</sub> (R<sub>MS</sub>): 16 A; V<sub>DRM</sub>: 800 V; Package: SOT78 (TO-220AB); Container: Tube pack 800 V, 16 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB
|
NXP Semiconductors N.V.
|
IRFZ34-005 IRFZ34 IRFZ34PBF IRFZ34-003PBF IRFZ34-0 |
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package 30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
International Rectifier Bourns, Inc.
|
KF80N08P |
TO-220AB PACKAGE
|
http://
|
BTA08-600A |
With TO-220AB insulated package
|
Inchange Semiconductor ...
|
BTA12-600BW |
With TO-220AB insulated package
|
Inchange Semiconductor ...
|
BTA10-600C |
With TO-220AB insulated package
|
Inchange Semiconductor ...
|
IRGBC20S |
600V Discrete IGBT in a TO-220AB package
|
International Rectifier
|
IRGBC40S |
600V Discrete IGBT in a TO-220AB package
|
International Rectifier
|
FEP16BT FEP16AT FEP16CT |
DIODE 16 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC PACKAGE-3, Rectifier Diode DIODE 16 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC PACKAGE-3, Rectifier Diode DIODE 16 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC PACKAGE-3, Rectifier Diode
|
Vishay Semiconductors
|
IRFBC20 |
2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A) 600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
IRF[International Rectifier]
|
IRG4BC20UD IRG4BC20UDPBF |
600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB package
|
International Rectifier
|
IRG4BC15MD |
600V Fast 1-8 kHz Copack IGBT in a TO-220AB package
|
International Rectifier
|
|