PART |
Description |
Maker |
K5D5657ACM-F015 |
256Mb NAND and 256Mb Mobile SDRAM 256Mb的NAND闪存56Mb移动SDRAM
|
Samsung Semiconductor Co., Ltd.
|
K5D5657ACM-F015 |
MCP / 256Mb NAND and 256Mb Mobile SDRAM
|
Samsung Electronics
|
HA9P5221-5 HA-5221 FN2915 HA7-5221-5 |
100MHz, Low Noise, Precision Operational Amplifier(100MHz,低噪精密运算放大 From old datasheet system 100MHz/ Low Noise/ Precision Operational Amplifier
|
INTERSIL[Intersil Corporation]
|
M378T6553CZ3-CCC M378T6553CZ3-CD5 M378T6553CZ3-CE6 |
DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb C-die 64/72-bit Non-ECC/ECC
|
SAMSUNG[Samsung semiconductor]
|
K9F5608U0C-VIB0 K9F5608Q0C-HIB0 K9F5608U0C-HIB0 K9 |
TV 3C 3#20 PIN WALL RECP 512Mb/256Mb 1.8 NAND闪存勘误 512Mb/256Mb 1.8V NAND Flash Errata 512Mb/256Mb 1.8 NAND闪存勘误 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
|
http:// Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
M366S3354BTS-C7A M374S6553BTS-C7A M374S2953BTS-C7A |
SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
NA570L-R8GI-H81-US |
Supports 32 GB DDR3-1600 non-ECC/ECC memory
|
Axiomtek Co., Ltd.
|
WV3EG216M64STSU335D4NG |
256MB - 2x16Mx64 DDR SDRAM UNBUFFERED 256MB 2x16Mx64 DDR内存缓冲
|
Electronic Theatre Controls, Inc.
|
EL2045 EL2045CS-T13 EL2045CS-T7 |
Op Amp, 100MHz, Gain-of-2 Stable, Low Power 5.2mA, SR=275V/s, Dual or Single Supply (36V) Low-Power 100MHz Gain-of-2 Stable Operational Amplifier
|
Intersil Corporation
|
KBE00S003M-D411 KBE00S003M |
1Gb NAND*2 256Mb Mobile SDRAM*2 From old datasheet system 1Gb NANDx2 256Mb Mobile SDRAMx2
|
SAMSUNG[Samsung semiconductor]
|
LT1812 LT1812CS8 LT1812IS8 1812F LT1812CS5 LT1812I |
3mA, 100MHz, 750V/us Operational Amplifier with Shutdown 3毫安00MHz的,750V/us运算放大器具有关 CAP 330PF 250VAC CERAMIC Y2/X1 OP-AMP, 2000 uV OFFSET-MAX, 100 MHz BAND WIDTH, PDSO8 3mA/ 100MHz/ 750V/us Operational Amplifier with Shutdown From old datasheet system
|
STMicroelectronics N.V. Linear Technology, Corp. LINER[Linear Technology]
|