| PART |
Description |
Maker |
| ZTX652 ZTX653 |
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS
NPN Medium Power Transistor
|
Zetex Semiconductors
|
| FZT689 FZT689B |
SOT223 NPN SILICON PLANAR MEDIUM
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
|
Diodes Incorporated
ZETEX[Zetex Semiconductors]
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
| 2SC3279 E000814 SC3279 2SC3269 |
Silicon NPN transistor for strobo flash applications and medium power amplifier applications
STOROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
From old datasheet system
NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SD389A 2SD389AQ 2SD389P 2SD601 2SD601AR 2SD601AS |
Si NPN epitaxial planar. General amplifier.
Si NPN DIFFUSED JUNCTION MESA 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
Si NPN diffused juction mesa. Medium power amplifier.
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2 |
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 200.000A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 160 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 60 - 120 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 80 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 100 - 200 hFE.
|
Continental Device India Limited
|
| ZTX692B ZTX692 ZTX692B-15 |
NPN SILICON PLANAR MEDIUM POWER
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
|
ZETEX[Zetex Semiconductors]
Diodes Incorporated
|
| ZX5T851ZTA ZX5T851Z |
NPN Generation 5 Transistors in SOT89
60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
|
ZETEX[Zetex Semiconductors]
|
| SG2023 SG2023J_DESC SG2023N JAN2003J SG2003 SG2003 |
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS 500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
From old datasheet system
Driver - Medium Current Array
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| DXTN07100BP5-13 DXTN07100BP5 |
100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR PowerDI?5
100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR PowerDI垄莽5
|
Diodes Incorporated
|
| 2SC3279 2SC3279N |
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 2A I(C) | TO-92 晶体管|晶体管|叩| 10V的五（巴西）总裁|甲一（c）|2
NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
|
Toshiba, Corp.
Sanyo Semicon Device
Toshiba Semiconductor
Toshiba Corporation
|
