PART |
Description |
Maker |
MR27T12800J-XXXTYE MR27T12800J MR27T12800J-XXXTN M |
8M-Word x 16-Bit or 16M-Word x 8-Bit P2ROM 800万字× 16位或1,600字8位内P2ROM 8M X 16 MASK PROM, 90 ns, PDSO48
|
http:// OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD. OKI ELECTRIC INDUSTRY CO LTD
|
M5M4V16169DRT-15 M5M4V16169DTP |
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM 16MCDRAM6米(100万字6位)6K的缓存内存(1024字由16位)的SRAM
|
Mitsubishi Electric, Corp.
|
MC-4516CB646EF-A10 MC-4516CB646EF-A80 MC-4516CB646 |
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 DIMM-168 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
NEC, Corp. NEC Corp.
|
MC-4516CA726PF-A10 MC-4516CA726PF-A80 MC-4516CA726 |
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE 16M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 DIMM-168 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE MODULE UNBUFFERED TYPE
|
NEC, Corp. NEC Corp.
|
MBM29DL161BD MBM29DL161BE70PFTN MBM29DL161BE70PFTR |
16M (2M x 8/1M x 16) BIT Dual Operation
|
FUJITSU[Fujitsu Media Devices Limited]
|
UPD4217805LLE-A50 UPD42S17805LLE-A50 UPD4217805LG5 |
3.3V OPERATION 16 M-BIT DYNAMIC RAM 2M-WORD BY 8-BIT,EDO x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM 3.3V OPERATION 16 M-BIT DYNAMIC RAM 2M-WORD BY 8-BIT,HYPER PAGE MODE 3.3运行16位动态随机存储器2m-word8位,超页模式
|
NEC TOKIN America Inc. NEC TOKIN, Corp.
|
MBM29DL161BE-70PBT MBM29DL16XTE70 MBM29DL161BE-70T |
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
|
Fujitsu Media Devices Limited SPANSION[SPANSION]
|
GLT5160L16 GLT5160L16-7TC GLT5160L16-10FJ GLT5160L |
16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM
|
ETC[ETC] N.A.
|
MC-4516CD641PS-A10 MC-4516CD641PS-A80 MC-4516CD641 |
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
|
Elpida Memory
|
MR27V1641L |
16M.Word × 1.Bit Serial Production Programmed ROM (P2ROM)
|
List of Unclassifed Manufacturers
|
THMY6416H1EG-80 |
16M Word x 64 Bit Synchronous DRAM Module(16Mx 64位同步动态RAM模块)
|
Toshiba Corporation
|