PART |
Description |
Maker |
HY62UF16806B-DFC HY62UF16806B-DFI HY62UF16806B-C H |
x16|3V|55/70/85|Super Low Power Slow SRAM - 8M x16 | 3V的| 55/70/85 |超级低功耗SRAM的速度 800 512Kx16bit full CMOS SRAM
|
GE Security, Inc. Hynix Semiconductor
|
MB84SD23280FE-70 MB84SD23280E-70PBS MB84SD23280FA |
64M (X16) FLASH MEMORY 8M (X16) SRAM
|
SPANSION[SPANSION]
|
LRS1B12 |
64M ( X16) Flash & 64M ( X16) Flash & 32M ( X16) SCRAM & 8M (x16) SRAM
|
Sharp Microelectronics
|
MB84SD23280FA-70PBS MB84SD23280E-70PBS MB84SD23280 |
64M (X16) FLASH MEMORY 8M (X16) SRAM PQ II HIP 7 REV A NO-PB SPECIALTY MEMORY CIRCUIT, PBGA73 PLASTIC, FBGA-73
|
Spansion Inc. Spansion, Inc.
|
M36W0R6030B0ZAQ M36W0R6030T0 M36W0R6030T0ZAQ M36W0 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
|
ST Microelectronics
|
KM6164002A KM6164002AJ-1500 |
256K X 16 STANDARD SRAM, 15 ns, PDSO44 From old datasheet system x16 SRAM
|
Samsung
|
HY62SF16201ALLF-85 HY62SF16201ASLF-85 HY62SF16201A |
Super Low Power Slow SRAM - 2Mb x16 SRAM
|
Hynix Semiconductor
|
MB84VP24491HK-70PBS MB84VP24491HK |
128M (X16) FLASH MEMORY 32M (X16) Mobile FCRAMTM 128M的(x16)的快闪记忆2M的(x16)的移动FCRAMTM
|
Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
|
M36DR432-ZAT M36DR432A100ZA6T M36DR432A100ZA6C M36 |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product 32兆位Mb x16插槽,双行,页闪存和4兆位256K x16的SRAM,多个存储产
|
意法半导 STMicroelectronics N.V.
|
M36W832TE70ZA1T M36W832TE85ZA1T M36W832TE-ZAT M36W |
SPECIALTY MEMORY CIRCUIT, PBGA66 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
|
SGS Thomson Microelectronics NUMONYX 意法半导 ST Microelectronics
|