| PART |
Description |
Maker |
| BUK437-500A |
(BUK437-500A/B) Power MOS Transistor
|
Philips
|
| NESG2101M05-T1 NESG2101M05 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
|
NEC Corp.
NEC[NEC]
|
| UPA1716 UPA1716G PA1716 UPA1716G-E1 UPA1716G-E2 |
Pch enhancement type power MOS FET
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS Field Effect Transistor
|
NEC[NEC]
|
| NESG2101M16 NESG2101M16-T3 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR 邻舍npn型硅锗高频陈德良SIS的职权范
|
NEC, Corp.
NEC[NEC]
|
| UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| NESG2031M05-T1 NESG2031M05 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR 邻舍npn型硅锗高频陈德良SIS的职权范
From old datasheet system
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| APT8058HVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 13.5A 0.580 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT8075BVR APT8075 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 12A 0.750 Ohm
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
|
| APT20M45BVR |
POWER MOS V 200V 56A 0.045 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT8024B2VFR APT8024LVFR APT50M85B2VFR APT50M85LVF |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 33A 0.240 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
