| PART |
Description |
Maker |
| TC55NEM208AFTN70 TC55NEM208A TC55NEM208AFPN TC55NE |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TH58100FTI |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| TC51WHM616AXBN65 TC51WHM616AXBN70 |
4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58512FT |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 马鞍山暂定东芝数字集成电路硅栅CMOS
512-MBIT (64M x 8 BITS) CMOS NAND E2PROM
|
Toshiba, Corp.
|
| TC58NS256DC |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
|
TOSHIBA[Toshiba Semiconductor]
|
| STK621-031 |
CONNECTOR ACCESSORY
TENTATIVE
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| G141I1-L01 |
TFT LCD Tentative Specification
|
AZ Displays
|
| G121X1-L03 |
TFT LCD Tentative Specification
|
AZ Displays
|
| 2SK3031TENTATIVE 2SK30ATMR 2SK30ATMGR |
2SK3031 (Tentative) - N-Channel Power F-MOS FET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|场效应| N沟道| 300UA我（直）|92
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|场效应| N沟道| 2.6MA我（直）|2
|
KEMET, Corp.
Electronic Theatre Controls, Inc.
|
| FM305B FM306B FM303B FM302B FM304B FM301B FM302B-W |
3 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA
3 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AA
3 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA
SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AA
3 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA
|
RECTRON LTD
Rectron Semiconductor
|
