| PART |
Description |
Maker |
| HB52RD648DC-B HB52RF648DC-B HB52RD648DC-B6BL HB52R |
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 8 components) PC133/100 SDRAM
512M; 100MHz LVTTL interface SDRAM
512M; 133MHz LVTTL interface SDRAM
|
Elpida Memory
|
| HYMP564S648-E3 HYMP564S648-C4 HYMP532S646-E3 HYMP5 |
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver.
DDR2 SDRAM - SO DIMM 256MB
DDR2 SDRAM - SO DIMM 512MB
DDR2 SDRAM - SO DIMM 1GB
|
HYNIX[Hynix Semiconductor]
|
| IS42S16100-7T IS42S16100-6T IS42S16100-10T |
x16 SDRAM x16内存
|
Integrated Silicon Solution, Inc.
|
| MT48LC4M16A2P-6A |
64Mb: x4, x8, x16 SDRAM
|
Micron Technology
|
| MT47H64M16HR-25ELH |
1Gb: x4, x8, x16 DDR2 SDRAM
|
Micron Technology
|
| MT41J128M8 128M8 MT41J256M4 MT41J64M16 |
1Gb: x4, x8, x16 DDR3 SDRAM
|
Micon Design Technology Corporation
|
| MT47H16M16BG-3ITB |
256Mb: x4, x8, x16 DDR2 SDRAM
|
Micron Technology
|
| MT47H32M16CC3B |
512Mb: x4, x8, x16 DDR2 SDRAM
|
Micron Technology
|
| K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187
; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No
128Mb SDRAM, 3.3V, LVTTL, 166MHz
128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| VG3617161BT |
x16 CMOS SDRAM
From old datasheet system
|
VSI
|
