| PART |
Description |
Maker |
| PIC16F84AT-04I_PQTP PIC16F84AT-04I_PROM PIC16F84AT |
This powerful (200 nanosecond instruction execution) yet easy-to-program (only 35 single word instructions) CMOS Flash/EEPROM-based ...
18-pin Enhanced FLASH/EEPROM 8-bit Microcontroller
|
Microchip Technology
|
| PUMA67F16006A-80E PUMA67F16006A-12E PUMA67F16006AI |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
120NS, SOIC, IND TEMP(EEPROM)
70NS, PDIP, IND TEMP(EEPROM)
120NS, TSOP, COM TEMP(EEPROM)
200NS, PLCC, COM TEMP(EEPROM)
DIE(EEPROM)
90NS, PGA, 883C; LEVEL B FULLY COMPLIANT(EEPROM)
120NS, PGA, 883C; LEV B FULLY COMPLIANT(EEPROM)
120NS, PLCC, IND TEMP(EEPROM) X32号，闪存EEPROM模块
x32 Flash EEPROM Module X32号，闪存EEPROM模块
|
Lattice Semiconductor, Corp.
Amphenol, Corp.
|
| PUMA68F4001I-15 PUMA68F4001MB-17 PUMA68F4001M-17 P |
x32 Flash EEPROM Module
1M (64K X 16), 3V, FLASH, VSOP, COM TEMP(FLASH) X32号，闪存EEPROM模块
|
Macronix International Co., Ltd.
|
| HY29F080G-70 HY29F080G-12 HY29F080T-70 HY29F080R-9 |
x8 Flash EEPROM 1M X 8 FLASH 5V PROM, 90 ns, PDSO40
8 Megabit (1M x 8), 5 Volt-only, Flash Memory 8兆位米8），5伏只，闪
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| HY229F800BT-55 HY29F800BT-55E HY29F800BT-55I HY229 |
x8/x16 Flash EEPROM x8/x16闪存EEPROM
EEPROM EEPROM
|
Hynix Semiconductor, Inc.
SIEMENS AG
AEGIS Semicondutores LTDA
|
| W541E201 W541E202 W541E203 W541E204 W541E205 W541E |
W541C201 w 2Kx16 Flash EEPROM version
4 BIT FLASH EPROM MICROCONTROLLER
|
Winbond Electronics
|
| LH28F160S5HB-L70 LH28F160S5HB-L10 LH28F160S5HD-L10 |
1M X 16 FLASH 5V PROM, 80 ns, PDSO56 0.600 INCH, PLASTIC, SSOP-56
x8/x16 Flash EEPROM x8/x16闪存EEPROM
|
Sharp Electronics, Corp.
Sharp, Corp.
|
| HY29LV160 HY29LV160BF-12 HY29LV160BF-12I HY29LV160 |
IC,EEPROM,NOR FLASH,1MX16/2MX8,CMOS,TSSOP,48PIN,PLASTIC
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
|
HYNIX[Hynix Semiconductor]
|
| SST29EE010-70-4C-UH SST29VE010-70-4C-UH SST29LE010 |
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PQCC32
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PDSO32
1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8）页模式EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 90 ns, PQCC32
1 Mbit (128K x8) Page-Mode EEPROM 1兆位128K的8）页模式的EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8）页模式的EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| STM8S103K3T6C STM8S103F3M3 STM8S103F2 STM8S103K3T3 |
Mainstream Access line 8-bit MCU with 4 Kbytes Flash, 16 MHz CPU, integrated EEPROM
Mainstream Access line 8-bit MCU with 8 Kbytes Flash, 16 MHz CPU, integrated EEPROM
Access line, 16 MHz STM8S 8-bit MCU, up to 8 Kbytes Flash, data EEPROM,10-bit ADC, 3 timers, UART, SPI, I2C
|
ST Microelectronics
STMicroelectronics
|
