PART |
Description |
Maker |
2SC3030 |
TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE HIGH SPEED SWITCHING
|
FUJI[Fuji Electric]
|
FC903 FC903-TR-E |
0.1 A, 3 ELEMENT, SILICON, SIGNAL DIODE High-Speed Switching Composite Diode Silicon Epitaxial Planar Type High-Speed Switching Composite Diode
|
ON Semiconductor SANYO SEMICONDUCTOR CO LTD SANYO[Sanyo Semicon Device]
|
2SK182607 2SK1826 |
N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS)
|
Toshiba Semiconductor
|
2SK182507 2SK1825 |
N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS)
|
Toshiba Semiconductor
|
IKP08N65F5 IKP08N65F5-15 |
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies A...
|
IKP08N65H5 IKP08N65H5-15 |
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies A...
|
RJK60S2DPP-E0 RJK60S2DPP-E0T2 |
600V - 10A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJL60S5DPP-E0 RJL60S5DPP-E0T2 |
600V - 20A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
HSC119 |
Silicon Epitaxial Planar Diode for High Speed Switching
|
HITACHI[Hitachi Semiconductor]
|
FC808 |
High-Speed Switching Composite Diode Cathode Common
|
SANYO[Sanyo Semicon Device]
|
Q62702-A1046 |
Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high speed switching)
|
Siemens Semiconductor G...
|