PART |
Description |
Maker |
89LV1632RPQK-30 |
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 30 ns, CQFP68 16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 16兆位12k × 32的位)低压亿立方米的SRAM
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Maxwell Technologies, Inc
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AT27BV040 AT27BV040-12VI AT27BV040-12JI AT27BV040- |
120NS, VSOP, IND TEMP(EPROM) 512K X 8 OTPROM, 120 ns, PDSO32 4-Megabit (512K x 8) Unregulated Battery-Voltage High-Speed OTP EPROM
|
Atmel, Corp. ATMEL Corporation
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79C0408 79C0408RT2FH-15 79C0408RT2FK-15 79C0408RT2 |
4 Megabit (512k x 8-bit) EEPROM MCM 512K X 8 EEPROM 5V MODULE, 200 ns, DFP40 4 Megabit (512k x 8-bit) EEPROM MCM 512K X 8 EEPROM 5V MODULE, 120 ns, DFP40 4 Megabit EEPROM MCM 512K X 8 EEPROM 5V MODULE, 150 ns, DFP40 4 Megabit EEPROM MCM
|
Maxwell Technologies, Inc
|
K6F4008R2CFAMILY K6F4008R2C-FF850 |
512K X 8 STANDARD SRAM, 85 ns, PBGA48 512K x 8bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
AT49BV8192 AT49LV8192 AT49LV8192T-20TI AT49BV8192- |
8-Megabit 512K x 16 CMOS Flash Memory 512K X 16 FLASH 3V PROM, 200 ns, PDSO48 8-Megabit 512K x 16 CMOS Flash Memory 512K X 16 FLASH 3V PROM, 200 ns, PDSO44 8-Megabit 512K x 16 CMOS Flash Memory 512K X 16 FLASH 3V PROM, 150 ns, PDSO44 8-Megabit 512K x 16 CMOS Flash Memory 512K X 16 FLASH 3V PROM, 150 ns, PDSO48
|
Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation]
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BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8 Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) Asynchronous 4M(512Kx8) bits Static RAM
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BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor] Brilliance Semiconducto...
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S29CD016G0MFFA202 S29CD016G0MFAA212 S29CD016G0JFAI |
32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O 32兆位米32位)6兆位12k × 32的位),2.5伏,只有突发模式,双启动,同步读/写闪存与VersatileI内存/输出 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O 32兆位米32位)6兆位512k × 32的位),2.5伏,只有突发模式,双启动,同步读/写闪存与VersatileI内存/输出 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O 512K X 32 FLASH 2.7V PROM, 67 ns, PBGA80
|
Spansion Inc. Spansion, Inc.
|
S29CD016G0JQFA212 S29CD032G0MFAA102 S29CD016G0MQAI |
32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
|
SPANSION
|
IS62WV5128ALL IS62WV5128BLL |
(IS62WV5128A(B)LL) 512K x 16 Low Voltage / Ultra Low Power CMOS SRAM (IS62WV51218A(B)LL) 512K x 16 Low Voltage / Ultra Low Power CMOS SRAM
|
Integrated Silicon Solution
|
AM29SL800CT150WBC AM29SL800CB120EI AM29SL800CB120E |
CAP 150UF 6.3V 20% TANT SMD-7343-30 TR-7 Quad 2-Input NOR Gates 14-SOIC -55 to 125 8兆位 M中的x 8-Bit/512亩x 16位).8伏的CMOS只超低电压快闪记忆体 IC LOGIC 1G79 SINGLE POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOP -40 85C SOT-23-5 3000/REEL 1M X 8 FLASH 1.8V PROM, 100 ns, PDSO48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位).8伏的CMOS只超低电压快闪记忆体 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 120 ns, PDSO48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 100 ns, PDSO48 16-Bit Buffer/Line Driver, OE Active Low
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
ACT-PS512K8 ACT-9S512K8N-010L2I ACT-9S512K8N-010L2 |
ACT-PS512K8 High Speed 4 Megabit Plastic Monolithic SRAM 16-Bit Delta-Sigma ADC with internal reference, PGA and oscillator. I2C Serial Interface 6-SOT-23 512K X 8 CACHE SRAM, 17 ns, PDSO36 0.930 X 0.405 INCH, 0.148 INCH HEIGHT, PLASTIC, SOJ-36 512K X 8 CACHE SRAM, 25 ns, PDSO36 0.930 X 0.405 INCH, 0.148 INCH HEIGHT, PLASTIC, SOJ-36 ACT-PS512K8 High Speed 4 Megabit Plastic Monolithic SRAM 行为PS512K8高兆位单片SRAM的塑 512K X 8 CACHE SRAM, 15 ns, PDSO36 512K X 8 CACHE SRAM, 20 ns, PDSO36
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AEROFLEX[Aeroflex Circuit Technology] Aeroflex Inc. Aeroflex, Inc. Aeroflex Circuit Techno...
|
AT49BV008A-12TI |
8-megabit (1M x 8/512K x 6) Flash memory
|
ATMEL Corporation
|