Part Number Hot Search : 
7N0308 SE077 PE4906 368EGM L7005 RFBC40 F9221 MUR1010D
Product Description
Full Text Search

BLL6H0514-25 - LDMOS Driver Transistor

BLL6H0514-25_2290930.PDF Datasheet


 Full text search : LDMOS Driver Transistor
 Product Description search : LDMOS Driver Transistor


 Related Part Number
PART Description Maker
BLF872 BLF872-2015 UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
NXP Semiconductors
Quanzhou Jinmei Electro...
BLF4G20LS-110B From old datasheet system
UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
Philips Semiconductors
NXP Semiconductors N.V.
BLF6G22-45 Power LDMOS transistor
Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
NXP Semiconductors N.V.
BLF7G22LS-100P Power LDMOS transistor
100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
NXP Semiconductors N.V.
BLF6G27LS-75 BLF6G27-75 Product description75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
WiMAX power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. BLF6G27-75<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
NXP Semiconductors N.V.
LB421-14 RF POWER LDMOS TRANSISTOR
   SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Polyfet RF Devices
MAPL-000978-0075LF MAPL-000978-0075LN MAPL-000978- LDMOS Pulsed Power Transistor 75W, 978 MHz, 400μs Pulse, 1% Duty
LDMOS Pulsed Power Transistor 75W, 978 MHz, 400楼矛s Pulse, 1% Duty
   LDMOS Pulsed Power Transistor
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
PTF080601F PTF080601E PTF080601A PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦,860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
INFINEON[Infineon Technologies AG]
BLF8G22LS-270 Power LDMOS transistor
NXP Semiconductors
BLF6G15LS-250PBRN Power LDMOS transistor
NXP Semiconductors
 
 Related keyword From Full Text Search System
BLL6H0514-25 Address BLL6H0514-25 PDF BLL6H0514-25 Manufacturer BLL6H0514-25 Output BLL6H0514-25 Cirkuit diagram
BLL6H0514-25 taping code BLL6H0514-25 Serial BLL6H0514-25 Lead forming BLL6H0514-25 ascel BLL6H0514-25 adc
 

 

Price & Availability of BLL6H0514-25

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.28957200050354