| PART |
Description |
Maker |
| UPD4516821AG5-A12-7JF UPD4516421AG5-A12-7JF UPD451 |
x8 SDRAM
x4 SDRAM x4内存
x16 SDRAM x16内存
|
NEC, Corp.
Infineon Technologies AG
|
| K4X56163PE-LG K4X56163PE-LFG |
16M x16 Mobile DDR SDRAM 1,600 x16移动DDR SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| UPD45128441G5-A10BL9JF UPD45128841G5-A10BL9JF UPD4 |
x8 SDRAM
x16 SDRAM
x4 SDRAM x4内存
|
Elpida Memory, Inc.
|
| MT46V16M16CV-6ITK MT46V64M4 MT46V32M8 MT46V32M8P-5 |
256Mb: x4, x8, x16 DDR SDRAM Features
Double Data Rate (DDR) SDRAM
|
Micron Technology
|
| W981216AH-8H W981216AH-75 W981216AH |
2M x 16 bit x 4 Banks SDRAM
x16 SDRAM 8M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
|
Winbond Electronics, Corp.
Winbond Electronics Corp
|
| W981216BH W981216 W981216BH-75 W981216BH-75I W9812 |
2M x 4 Banks x 16 Bit SDRAM
Low Power SDRAM
Industrial SDRAM
2M x 4 BANKS x 16 BIT SDRAM
DRAM - Datasheet Reference
|
Winbond Electronics Corp
WINBOND[Winbond]
|
| HYS72V32301GR-7.5 HYS72V64300GR-7.5 HYS72V16300GR- |
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块)
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块)
3.3V 1GB SDRAM Module(3.3V 1GSDRAM 模块)
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块) 3.3 256MB的内存模块（3.3 256M位内存模块）
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块) 3.3 128MB的内存模块（3.3V28兆位内存模块
|
SIEMENS AG
|
| HYB39S64160BTL-7.5 |
x16 SDRAM x16内存
|
Infineon Technologies AG
|
| IS43DR86400B |
512Mb (x8, x16) DDR2 SDRAM
|
Integrated Silicon Solution, Inc
|
| HYMD264646B8-H HYMD264646B8-K HYMD264646B8-L HYMD2 |
Unbuffered DDR SDRAM DIMM
64Mx64|2.5V|M/K/H/L|x16|DDR SDRAM - Unbuffered DIMM 512MB
|
Hynix Semiconductor
|
| W981616AH-8 W981616AH-7 |
x16 SDRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
x16 SDRAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
|
Winbond Electronics, Corp.
|
