| PART |
Description |
Maker |
| SSM6G18NU |
Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (P-ch SBD)
|
Toshiba Semiconductor
|
| SSM5H16TU |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (N-ch SBD)
|
Toshiba Semiconductor
|
| SSM5H11TU |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (N-ch SBD)
|
Toshiba Semiconductor
|
| MMPQ2907A FFB2907A FFB2907A_1 FMB2907A FMB2907ANL |
PNP Multi-Chip General Purpose Amplifier
600 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD SEMICONDUCTOR CORP
|
| FFB3906 FMB3906 MMPQ3906 |
PNP Multi-Chip General Purpose Amplifier
|
FAIRCHILD[Fairchild Semiconductor]
|
| FMB200 |
PNP Multi-Chip General Purpose Amplifier
|
Fairchild Semiconductor
|
| FJYF2906 FJYF2906TF FJYF2906TFNL |
PNP Multi-Chip General Purpose Amplifier
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| DPS128X16A3-85M DPS128X16H3-85M DPS128X16H3-85B DP |
256K X 8 MULTI DEVICE SRAM MODULE, 85 ns, CPGA50 CERAMIC, MODULE, SLCC, PGA-50
256K X 8 MULTI DEVICE SRAM MODULE, 85 ns, CQFP48 GULLWING, SLCC-48
256K X 8 MULTI DEVICE SRAM MODULE, 85 ns, CQIP48 SLCC-48
|
Twilight Technology, Inc.
|
| HN4C05JU |
MULTI CHIP DISCRETE DEVICE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS FOR MUTING AND SWITCHING APPLICATIONS)
|
Toshiba Semiconductor
|
| SYS321000LK-012 SYS321000LK-015 SYS321000ZK-015 SY |
1M X 32 MULTI DEVICE SRAM MODULE, 15 ns, PSMA72 PLASTIC, SIMM-72
1M X 32 MULTI DEVICE SRAM MODULE, 15 ns, PZIP72 PLASTIC, ZIP-72
1M X 32 MULTI DEVICE SRAM MODULE, 20 ns, PSMA72 PLASTIC, SIMM-72
1M X 32 MULTI DEVICE SRAM MODULE, 12 ns, PZIP72 PLASTIC, ZIP-72
x32 SRAM Module X32号的SRAM模块
1M X 32 MULTI DEVICE SRAM MODULE, 20 ns, PZIP72 PLASTIC, ZIP-72
|
Sumida, Corp.
TE Connectivity, Ltd.
|
| NN5099K |
10.5V; 1481mW; silicon multi chip IC. For color TV
IC DIVISION
|
Panasonic
ETC[ETC]
|
