PART |
Description |
Maker |
N256S0818HDA N256S0830HDA N256S08XXHDA N256S0818HD |
32K X 8 STANDARD SRAM, 25 ns, PDSO8 256Kb Low Power Serial SRAMs 32K 】 8 bit Organization 256Kb Low Power Serial SRAMs 32K × 8 bit Organization
|
AMI SEMICONDUCTOR
|
HM62V16100LBPI-XX HM62V16100LTI-XX |
Low Power SRAMs
|
Hitachi Semiconductor
|
HM628512CLTT/CLTT-XXSL HM628512CLP/CLP-XXSL HM6285 |
Low Power SRAMs
|
Hitachi Semiconductor
|
HM9264B HM9264BLFP-10L HM9264BLFP-8L HM9264BLP-10L |
64 k SRAM (8-kword x 8-bit) Low Power SRAMs
|
http:// Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
|
N256S0818HDA |
(N256S0818HDA / N256S0830HDA) 256Kb Low Power Serial SRAMs 32K X 8 bit Organization
|
AMI
|
IDT71V65603 IDT71V65803S150PFI IDT71V65803S150BQI |
256K x 36/ 512K x 18 3.3V Synchronous ZBT SRAMs 256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs ZBT? Feature 3.3V I/O, Burst Counter Pipelined Outputs 256K x 36 512K x 18 3.3V Synchronous ZBT SRAMs From old datasheet system 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs
|
IDT[Integrated Device Technology]
|
GS832218B-133 GS832218B-133I GS832218B-150 GS83221 |
64K 3.3 VOLT SERIAL CONFIGURATION PROM 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 GIGABASE 350 CAT5E PATCH 1 FT, SNAGLESS, WHITE 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万18100万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36,为512k × 72分配36MBS /双氰胺同步突发静态存储器 DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35 (GS832218 / GS832236 / GS832272) S/DCD Sync Burst SRAMs
|
ETC Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers List of Unclassifed Man...
|
GS842Z18AB-166 GS842Z18AB-166I GS842Z18AB-180 GS84 |
4Mb NBT SRAMs 4Mb Pipelined and Flow Through Synchronous NBT SRAMs
|
GSI[GSI Technology]
|
GS880F18 GS880F36T-11I GS880F36T-14 GS880F36T-12I |
8Mb12K x 18Bit) Synchronous Burst SRAM(8M位(512K x 18位)同步静态RAM(带2位脉冲地址计数器)) 512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100 512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 14 ns, PQFP100 512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 12 ns, PQFP100 512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 12 ns, PQFP100 512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11.5 ns, PQFP100 512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100
|
GSI Technology, Inc. Molex, Inc.
|
GS816118CD-333I GS816118CD-300 GS816118CD-300I GS8 |
18Mb Burst SRAMs 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|