PART |
Description |
Maker |
QM100HA-H QM100HY-H |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
CM50MD-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
CM10MD-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
CM15MD1-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE
|
Mitsubishi Electric Corporation
|
CM30MD1-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE
|
Mitsubishi Electric Corporation
|
PM20CSJ060 PM400DAS060 PM100DSA120 PM300CVA060 PM3 |
IPMS Modules: 600V MITSUBISHI INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE IPMS Modules:1200V 50Amp - intelligent power modules
|
Mitsubishi Electric Corporation
|
VUB120-12NO2 VUB120-16NO2 VUB160-16NO2 VUB160-12NO |
Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System 140 A, 1200 V, N-CHANNEL IGBT Power Modules/Rectifier Bridge Modules: Three Phase Bridges with Dynamic Brake IGBT
|
IXYS, Corp. IXYS[IXYS Corporation]
|
FS15R12VT3 |
IGBT-modules IGBT Modules up to 1200V SixPACK; Package: AG-EASY750-1; IC (max): 15.0 A; VCE(sat) (typ): 1.7 V; Configuration: SixPACK; Technology: IGBT3; Housing: EasyPACK 750;
|
eupec GmbH Infineon Technologies
|
VID75-06P1 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
QM30HC-2H |
MITSUBISHI TRANSISTOR MODULES INDUCTION HEATER USE NON-INSULATED TYPE
|
Mitsubishi Electric Corporation
|