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LPC1227FBD64-301 - Up to 128 KB Flash and configurable peripherals for industrial control

LPC1227FBD64-301_2232996.PDF Datasheet

 
Part No. LPC1227FBD64-301 LPC1227FBD48-301 LPC1200 LPC1225FBD64-321 LPC1224FBD48-121 LPC1224FBD48-101 LPC1225FBD48-301 LPC1226FBD48-301 LPC1225FBD48-321 LPC1224FBD64-101 LPC1224FBD64-121 LPC1226FBD64-301 LPC1225FBD64-301
Description Up to 128 KB Flash and configurable peripherals for industrial control

File Size 127.33K  /  2 Page  

Maker


NXP Semiconductors



JITONG TECHNOLOGY
(CHINA HK & SZ)
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Part: LPC1227FBD64/301,1
Maker: NXP Semiconductors
Pack: ETC
Stock: Reserved
Unit price for :
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 Full text search : Up to 128 KB Flash and configurable peripherals for industrial control
 Product Description search : Up to 128 KB Flash and configurable peripherals for industrial control


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AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位)CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
29PL256N S29PL129N70GAW003 S29PL256N65GFWW03 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 8M X 16 FLASH 3V PROM, 70 ns, PBGA64
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 16M X 16 FLASH 3V PROM, 65 ns, PBGA84
Spansion Inc.
Spansion, Inc.
S29PL129N70FFW002 S29PL127N65GFIW02 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
SPANSION
S29PL256N65FAWW02 S29PL129N65FAWW00 S29PL256N65FAW 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
SPANSION[SPANSION]
S29PL-N07 S29PL127N65GFW000 S29PL129N65GFW000 S29P 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
SPANSION
AS29P200 AS29F200B-120SC AS29F200B-70TC AS29F200B- 5V 256K x 8 / 128K x 16 CMOS Flash EEPROM
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 120ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 70ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 90ns
Alliance Semiconductor
AM29F010B-90EK AM29F010B-45EC AM29F010B-45PC AM29F 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 128K X 8 FLASH 5V PROM, 90 ns, PDSO32
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 128K X 8 FLASH 5V PROM, 45 ns, PDSO32
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Spansion, Inc.
SPANSION LLC
AT49F001AT-55VI AT49F001AT-55JI ANT-55VI AT49F001A 1-MEGABIT (128 X 8) 5-VOLT ONLY FLASH MEMORY 128K X 8 FLASH 5V PROM, 55 ns, PDSO32
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Atmel, Corp.
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S29GL064M90FCIR00 S29GL064M90BCIR82 S29GL064M90FAI 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 m MirrorBit Process Technology
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256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 ?? MirrorBit Process Technology
Spansion Inc.
Spansion, Inc.
SPANSION LLC
CY7C375I UltraLogic 128-Macrocell Flash CPLD(超逻辑128-宏单元闪速CPLD) UltraLogic 128宏单元CPLD的闪光(超逻辑128 -宏单元闪速的CPLD
UltraLogic 128-Macrocell Flash CPLD(超逻辑28-宏单元闪速CPLD)
From old datasheet system
Cypress Semiconductor Corp.
V850E1 V850E_SV2 V850E_IA1 V850E_IA2 V850E_IA3 V85 V850E/IA2 Flash product ROM: 128 KB, RAM: 6 KB
V850E/IA2 Mask product ROM: 128 KB, RAM: 6 KB
V850E/IA3 Flash product ROM: 256 KB, RAM: 12 KB
ROM-less version; Internal RAM: 4K bytes
32-bit RISC single-chip microcontroller V850E/SV2
V850E/IA4 Flash memory product ROM: 256 KB, RAM: 12 KB
32-Bit Microprocessor Core
NEC[NEC]
 
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