| PART |
Description |
Maker |
| KVR266X64SC25 KVR266X64SC25_512 KVR266X64SC25/512 |
512MB 266MHz DDR Non-ECC CL2.5 SODIMM
MEMORY MODULE SPECIFICATION 512MB 64M x 64-BIT DDR266 CL2.5 200-PIN SODIMM
|
ETC
List of Unclassifed Manufacturers
|
| KVR133X64C3L/512 |
512MB 64M x 64-Bit PC133 CL3 Low Profile 168-Pin DIMM
|
Kingston Technology
|
| EBE52UD6AFSA EBE52UD6AFSA-6E-E EBE52UD6AFSA-4A-E |
512MB DDR2 SDRAM SO-DIMM (64M words x 64 bits, 2 Ranks)
|
Elpida Memory, Inc.
|
| EBE51UD8AGFA-6E-E EBE51UD8AGFA EBE51UD8AGFA-4A-E E |
512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank)
|
ELPIDA[Elpida Memory]
|
| EBE51UD8AEFA-6E-E EBE51UD8AEFA-6 |
512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank)
|
ELPIDA[Elpida Memory]
|
| EBE51RD8ABFA-5C-E EBE51RD8ABFA EBE51RD8ABFA-4A-E |
512MB Registered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
|
ELPIDA[Elpida Memory]
|
| EBE51ED8ABFA EBE51ED8ABFA-4A-E EBE51ED8ABFA-5C-E |
512MB Unbuffered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
|
ELPIDA[Elpida Memory]
|
| HYMP264R72L4-Y5 HYMP264R72L4-E3 HYMP264R72L4-Y6 HY |
64M X 72 DDR DRAM MODULE, 0.5 ns, DMA240
DDR2 SDRAM - Registered DIMM 512MB
|
HYNIX SEMICONDUCTOR INC
|
| K9F5608U0C-VIB0 K9F5608Q0C-HIB0 K9F5608U0C-HIB0 K9 |
TV 3C 3#20 PIN WALL RECP 512Mb/256Mb 1.8 NAND闪存勘误
512Mb/256Mb 1.8V NAND Flash Errata 512Mb/256Mb 1.8 NAND闪存勘误
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| EBE51ED8AGFA-5C-E EBE51ED8AGFA-6E-E EBE51ED8AGFA-4 |
512MB Unbuffered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
LJT 24C 12#16 12#12 SKT PLUG
|
Elpida Memory, Inc.
|
| EBE51UD8AEFA-5C-E EBE51UD8AEFA-4A-E |
512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank) 512MB的无缓冲DDR2 SDRAM DIMM内存400字64位，1个等级）
|
Elpida Memory, Inc.
|
| KVR400X72C3A/1G |
1GB 128M x 64-Bit DDR400
|
Kingston Technology
|
