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IXBH15N160 - (IXBH15N140 / IXBH15N160) High Voltage BIMOSFET Monolithic Bipolar MOS Transistor

IXBH15N160_2218958.PDF Datasheet


 Full text search : (IXBH15N140 / IXBH15N160) High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
 Product Description search : (IXBH15N140 / IXBH15N160) High Voltage BIMOSFET Monolithic Bipolar MOS Transistor


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Bipolar Transistor; Collector Emitter Voltage, Vceo:350V; Transistor Polarity:NPN; Power Dissipation:1W; DC Current Gain Min (hfe):40; Collector Current:1A; Package/Case:3-TO-39; DC Current Gain Max (hfe):60; Terminal Type:5
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