| PART |
Description |
Maker |
| KDR367E |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| Q62702-D1288 BAT15-020S BAT15-050S BAT15-090S BAT1 |
RESISTOR,SMD1206,1.1K,1/4W,5% SILICON, LOW BARRIER SCHOTTKY, KA BAND, MIXER DIODE
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BAT15-013 BAT15-013S BAT15-033 BAT15-034 BAT15-043 |
From old datasheet system
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz)
330MHz Buffered Video Switches Crosspoint Building Blocks
Single/Dual/Quad, Wide-Bandwidth, Low-Power, Single-Supply Rail-to-Rail I/O Op Amps
500MHz, Low-Power Op Amps
BBG LO PWR MULT MOD H FRE; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Tape and Reel; Qty per Container: 2500
400MHz, Ultra-Low-Distortion Op Amps
250MHz, Broadcast-Quality, Low-Power Video Op Amps
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) 伊雷尔硅肖特基二极管（伊雷尔分立半导体和微波探测器和培养基的应用垒二极管混频器）
350MHz, Ultra-Low-Noise Op Amps SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
Single/Dual/Quad, 400MHz, Low-Power, Current Feedback Amplifiers SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| NSR0240P2T5G |
40V 0.2A low IR SOD-923 Schottky Diode 0.2 A, 40 V, SILICON, SIGNAL DIODE
Schottky Barrier Diode
|
ON Semiconductor
|
| BAT14-03 BAT14-03W Q62702-A1103 BAT1403W |
Silicon Schottky Diode (DBS mixer application to 12GHz Medium barrier type Low capacitance) SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6
Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
| GD500SD |
The GD500SD is designed for low power rectification and high reliability.
SURFACE MOUNT SCHOTTKY BARRIER DIODE
SURFACE MOUNT SCHOTTKY BARRIER DIODE
|
E-Tech Electronics LTD
GTM CORPORATION
|
| MADS-002502-1246HP MADS-002502-1246LP MADS-002502- |
SILICON, HIGH BARRIER SCHOTTKY, KU BAND, MIXER DIODE
SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes
|
M/A-COM Technology Solutions, Inc.
|
| 5082-2277 |
SCHOTTKY BARRIER DUAL DIODE SILICON, MEDIUM BARRIER SCHOTTKY, S-C BAND, MIXER DIODE
|
ASI
Advanced Semiconductor, Inc.
|
| DME3019-325-008 DME3013-131-012 DMJ3107-364-008 DM |
SILICON, MEDIUM BARRIER SCHOTTKY, S BAND, MIXER DIODE
SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE
SILICON, HIGH BARRIER SCHOTTKY, KU BAND, MIXER DIODE
SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE
SILICON, MEDIUM BARRIER SCHOTTKY, K BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, S BAND, MIXER DIODE
|
SKYWORKS SOLUTIONS INC
|
| YG865C10R |
Low IR Schottky barrier diode
20 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
|
Fuji Electric
FUJI ELECTRIC CO LTD
|
|
