PART |
Description |
Maker |
MIE-114A1 114A1 |
Infrared Emitting Diodes (IRED) GaAlAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
MIE-324H4 324H4 |
GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE 发动器的T 1包红外发光二极管 Infrared Emitting Diodes (IRED) 红外发光二极管(登记合格决定
|
Unity Opto Technology Co., Ltd. Vishay Intertechnology, Inc. UOT[Unity Opto Technology]
|
MIE-324A4 324A4 |
Infrared Emitting Diodes (IRED) AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
554A4 MIE-554A4 |
Infrared Emitting Diodes (IRED) AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
Unity Opto Technology
|
OP233 OP232 OP231 |
GaAs HERMETIC INFRARED EMITTING DIODES GaALAs Hermetic Infrared Emitting Diode(铝砷化镓密封红外发光二极工作温度范围-65 125
|
OPTEK Technologies Optek Technology
|
MIE-134G2 134G2 |
Infrared Emitting Diodes (IRED) GaAs/GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
LNA2901L |
GaAs Infrared Light Emitting Diode 5 mm, 1 ELEMENT, INFRARED LED, 950 nm
|
Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
|
CQX15 |
GaAs INFRARED EMITTING DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
NTE30001 |
2.5 mm, 1 ELEMENT, INFRARED LED, 950 nm Infrared Emitting Diode Bi.Directional
|
NTE Electronics, Inc. NTE[NTE Electronics]
|
LED55CB |
GaAs Infrared Emitting Diode; Package: TO-46; No of Pins: 2; Container: Bulk 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
TSHA620. TSHA6200 TSHA620 TSHA6203 TSHA6201 TSHA62 |
GaAlAs Infrared Emitting Diodes in 5 mm (T-13/4) Package 红外发光二极管的GaAIAs在?5毫米(翻 13 / 4)包 GaAlAs Infrared Emitting Diodes in ? 5 mm (T?1 3/4)Package GaAlAs Infrared Emitting Diodes in 5 mm (T-13/4) Package From old datasheet system GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package
|
Vishay Intertechnology, Inc. Vishay Intertechnology,Inc. TFUNK[Vishay Telefunken] VISAY[Vishay Siliconix]
|