PART |
Description |
Maker |
1N2981D 1N2987C 1N2973D 1N2987D 1N2989C 1N2980D 1N |
Diode Zener Single 17V 5% 10W 2-Pin DO-4 Diode Zener Single 25V 5% 10W 2-Pin DO-4 Diode Zener Single 9.1V 5% 10W 2-Pin DO-4 Diode Zener Single 30V 5% 10W 2-Pin DO-4 Diode Zener Single 16V 5% 10W 2-Pin DO-4 Diode Zener Single 7.5V 5% 10W 2-Pin DO-4 Diode Zener Single 24V 5% 10W 2-Pin DO-4 Diode Zener Single 175V 20% 10W 2-Pin DO-4 Diode Zener Single 50V 5% 10W 2-Pin DO-4 Diode Zener Single 43V 5% 10W 2-Pin DO-4 Diode Zener Single 56V 5% 10W 2-Pin DO-4 Diode Zener Single 13V 5% 10W 2-Pin DO-4 Diode Zener Single 8.2V 5% 10W 2-Pin DO-4 Diode Zener Single 15V 5% 10W 2-Pin DO-4 Diode Zener Single 27V 5% 10W 2-Pin DO-4 Diode Zener Single 18V 5% 10W 2-Pin DO-4 Diode Zener Single 105V 5% 10W 2-Pin DO-4 Diode Zener Single 52V 5% 10W 2-Pin DO-4 Diode Zener Single 47V 10% 10W 2-Pin DO-4 Diode Zener Single 36V 10% 10W 2-Pin DO-4 Diode Zener Single 36V 5% 10W 2-Pin DO-4 Diode Zener Single 51V 5% 10W 2-Pin DO-4 Diode Zener Single 47V 5% 10W 2-Pin DO-4
|
New Jersey Semiconductor
|
MAAP-008509-MCH000 MAAP-008509-SMB004 MA08509D_1 M |
Amplifier, Power, 10W 8.5-10.5 GHz
|
MACOM[Tyco Electronics]
|
MF1302T-1R8 MF1501T-1R5 MF1304T-6R8 MF1303T-100 MF |
Axial Molded Choke 0.5-2.5 GHz Ultralinear Mixer w/LO Buffer 8.5 - 11 GHz 6-bit Phase Shifter Low Noise Amp, SB Gain Block X-band Discrete Power pHEMT Ku-band Discrete Power pHEMT 18mm HFET 24mm HFET Cell-Band CDMA PA Module; 1-Bit Cell-Band PA Module; 1-Bit
|
ECM Electronics Limited.
|
EIC5359-10 |
5.30-5.90 GHz 10W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
PH1516-10 |
Wireless Bipolar Power Transistor, 10W 1.45 - 1.60 GHz
|
Tyco Electronics
|
MGFC40V3742A |
3.7 - 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC40V4450A |
4.4 - 5.0GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC40V6472_04 MGFC40V6472 MGFC40V647204 |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
http:// MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC40V7177A |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC40V5964_04 MGFC40V5964 MGFC40V596404 |
5.9 ~ 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC40V4450A C404450A |
From old datasheet system 4.4 - 5.0GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC40V7785B C407785B |
From old datasheet system 7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|