PART |
Description |
Maker |
MGFK38V2732 K382732 |
From old datasheet system 12.7~13.2GHZ BAND 6W INTERNALLY MATCHED GAAS FET 12.7-13.2GHz BAND 6W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC36V6472A |
6.4 - 7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC42V3742 |
3.7 - 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET 3.7 - 4.2GHz波段16周内部匹配砷化镓场效应管
|
Mitsubishi Electric, Corp. Mitsubishi Electric Semiconductor
|
MGFC39V3742A C393742A |
From old datasheet system 3.7 - 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
|
MGFC36V6472A C366472A |
From old datasheet system 6.4 - 7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
|
MGFC40V6472A C406472A |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET From old datasheet system
|
http:// MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC38V6472 |
RECTIFIER BRIDGE 10A 400V 220A-ifsm 1V-vf 5uA-ir GBU 20/BOX 6.4 - 7.2GHz BAND 6W INTERNALLY MATCHED GaAs FET
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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MGFL45V1920 L45V1920 |
From old datasheet system 1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET 1.9-2.0 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
CXA1787N |
2GHz-band PLL IC for Mobile Communications
|
SONY
|
2SC3904 |
Silicon NPN epitaxial planer type(For 2GHz band low-noise amplification)
|
PANASONIC[Panasonic Semiconductor]
|
MGFS45V2325 S452325 |
2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带功率30W国内MATCHD砷化镓场效应 From old datasheet system 2.3-2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
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Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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