| PART |
Description |
Maker |
| M27V801 |
8Mbit (1Mb x 8) Low Voltage UV EPROM and OTP EPROM(8M位低压可紫外擦除EPROM和一次可编程EPROM)
|
意法半导
|
| M29W800B M29W800B100M1R M29W800B100M1TR M29W800B10 |
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory
8 Mbit (1Mb x8 or 512Kb x16, Boot Block)Low Voltage Single Supply Flash Memory
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M28W160B-GBT M28W160BB |
16 Mbit 1Mb x16, Boot Block Low Voltage Flash Memory
|
STMicroelectronics
|
| M28W160BTT100GB1T M28W160BTT100GB6T M28W160BTT100N |
16 Mbit (1Mb x16, Boot Block) Low Voltage Flash Memory
16 Mbit 1Mb x16, Boot Block Low Voltage Flash Memory
16 Mbit 1Mb x16/ Boot Block Low Voltage Flash Memory
|
SGS Thomson Microelectronics
STMicroelectronics
ST Microelectronics
|
| M27V160-100K1 |
16 MBIT (2MB X8 OR 1MB X16) LOW VOLTAGE UV EPROM AND OTP EPROM
|
ST Microelectronics
|
| M27W801-100F6TR M27W801-120F6TR M27W801-150F6TR M2 |
8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M36W108 M36W108B M36W108B100ZM1T M36W108B100ZM5T M |
8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| HY62LF16806B-I HY62LF16806B-C |
High speed, super low power and 8Mbit full CMOS SRAM organized as 512K words by 16bits
|
HYNIX
|
| HY62SF16806B-I HY62SF16806B-C |
High speed, super low power and 8Mbit full CMOS SRAM organized as 524,288 words by 16bits
|
HYNIX
|
| N01L163WC2A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64Kx16 bit
|
NanoAmp Solutions
|
| N01M0818L1 N01M0818L1AN N01L0818L1AD-85I N01L0818L |
1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 128Kx8 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
