PART |
Description |
Maker |
UPD4265400G5-A50 UPD4265400G5-A60 UPD4265400G5-A70 |
2M x 8 Static RAM 256K x 4 Static RAM x4快速页面模式的DRAM 512K x 32 Static RAM x4快速页面模式的DRAM 3.3V 16K/32K x 36 FLEx36™ Synchronous Dual-Port Static RAM x4快速页面模式的DRAM x4 Fast Page Mode DRAM x4快速页面模式的DRAM 512K x 24 Static RAM x4快速页面模式的DRAM 2-Mbit (128K x 16) Static RAM x4快速页面模式的DRAM 128K x 8 Static RAM 128K的8静态RAM x4FastPageModeDRAM
|
Elpida Memory, Inc. EPCOS AG STMicroelectronics N.V. NEC, Corp.
|
CY62148EV30LL-55ZSXET |
4-Mbit (512 K x 8) Static RAM
|
Cypress
|
CY62148EV30LL-45ZSXA |
4-Mbit (512 K × 8) Static RAM
|
Cypress Semiconductor
|
CY62157EV30LL-45ZSXA CY62157EV30LL-55ZXE CY62157EV |
8-Mbit (512 K x 16) Static RAM Automatic power down when deselected
|
Cypress Semiconductor
|
CY7C1049DV33 CY7C1049DV33-10ZSXI CY7C1049DV33-12VX |
4-Mbit (512 K x 8) Static RAM Automatic power down when deselected
|
Cypress Semiconductor
|
CY7C1049CV33-8ZSXC CY7C1049CV33-10ZXI |
4-Mbit (512 K × 8) Static RAM Automatic power down when deselected
|
Cypress Semiconductor
|
UPD4264405G5-A50-7JD UPD4265405G5-A50-7JD UPD42S65 |
2-Mbit (128K x 18) Flow-Through SRAM with NoBL Architecture x4 EDO Page Mode DRAM 512K (32K x 16) Static RAM 36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 128K x 8 Static RAM 128K的8静态RAM
|
Omron Electronics, LLC
|
Y51-03 Y51-02 Y21-01 Y31-01 Y41-03 Y61-03 Y21-02 Y |
VALVE STARTUP 3/8 阀门启8 VALVE SHUT OFF 1/8 阀门关闭了1 / 8 VALVE STARTUP 1/2 阀门启 / 2 VALVE SHUT OFF 1/4 阀门关闭了1 / 4 VALVE SHUT OFF 3/4 VALVE STARTUP 1/4 IC SRAM 512KX36 2.5V SYN 100TQFP VALVE SHUT OFF 1/2 BRACKET T 1-Mbit (128K x 8) Static RAM IC MCU 8K FULL SPEED USB 28SDIP BRACKET L 1M/512K FAST ASYNC SRAM 5V, 3.3V, ISR High-Performance CPLDs 256K (32K x 8) Static RAM -bit AVR Microcontroller with 8K Bytes In- System Programmable Flash SPACER EZ-USB FX2LP USB Microcontroller High-Speed USB Peripheral Controller 1-Mbit (64K x 16) Static RAM 2M x 8 Static RAM 36-Mbit DDR-II SRAM 2-Word Burst Architecture BRANCH UNIT
|
AMIC Technology, Corp. Vishay Intertechnology, Inc. NXP Semiconductors N.V. Harwin PLC
|
AM41PDS3224DT10IS AM41PDS3224DT100IS AM41PDS3224DT |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices]
|
AM41PDS3224D |
32 Mbit (2 M x 16-Bit) CMOS 1.8 Volt-only. Simultaneous Operation Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM (Preliminary) 32兆位米16位)的CMOS电压1.8只。同时采取行动,页面模式闪存兆位12x 8-Bit/256x 16位),静态存储器(初步) Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
|
Advanced Micro Devices
|
AM41DL3208GB70I AM41DL3208GB85I AM41DL3208GT30IT A |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices] SPANSION
|
M41000002M M41000002R M41000002W AM41DL3228GB30IS |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices]
|